Semiconductor device, and method of fabricating the same

ABSTRACT

The gate electrode of a crystalline TFT is constructed as a clad structure which consists of a first gate electrode, a second gate electrode and a third gate electrode, thereby to enhance the thermal resistance of the gate electrode. Besides, an n-channel TFT is provided with a low-concentration impurity region which adjoins a channel forming region, and which includes a subregion overlapped by the gate electrode and a subregion not overlapped by the gate electrode, thereby to mitigate a high electric field near the drain of the TFT and to simultaneously prevent the OFF current of the TFT from increasing.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a semiconductor device in whicha circuit including a thin film transistor (hereinbelow, abbreviated to“TFT”) is formed on a substrate having an electrically insulatingsurface, and a method of fabricating the semiconductor device. By way ofexample, it relates to the constructions of an electrooptic device whichis typified by a liquid crystal display device, and an electronicequipment in which the electrooptic device is installed. Incidentally,here in this specification, the expression semiconductor device isintended to signify general devices which function by utilizingsemiconductor properties, and it shall cover within its category suchelectrooptic device and the electronic equipment as exemplified above.

[0003] 2. Description of the Related Art

[0004] There have been positively fostered the developments oftechniques for fabricating an active matrix type liquid crystal displaydevice by providing TFTs on a glass substrate or a quartz substrate.Among the TFTs, a TFT whose active layer is a semiconductor film havinga crystalline structure (hereinbelow, termed crystalline TFT) attains ahigh mobility. It is therefore said that the crystalline TFTs canintegrate functional circuits on an identical substrate, thereby torealize image display of high definition.

[0005] Here in this specification, the semiconductor film having acrystalline structure shall cover a single-crystal semiconductor, apolycrystalline semiconductor and a microcrystalline semiconductor.Further, it shall cover semiconductors disclosed in the official gazetteof a Japanese Patent Application Laid-open No. 7-130652 (1995) whichcorresponds to a U.S. Pat. No. 5,642,826, a Laid-open No. 8-78329(1996), a Laid-open No. 10-135468 (1998) which corresponds to a U.S.patent application Ser. No. 08/951,193, a Laid-open No. 10-135469 (1998)which corresponds to a Ser. No. 08/951,819, or a Laid-open No. 10-247735(1998) which corresponds to a Ser. No. 09/034,041.

[0006] In order to construct the active matrix type liquid crystaldisplay device, the n-channel TFTs (hereinbelow, termed pixel TFTs ) ofa pixel matrix circuit are necessary in as large a number as 1,000,000through 2,000,000. Further, when the TFTs of functional circuitsprovided around the pixel matrix circuit are added, a still largernumber of crystalline TFTs are necessary. Specifications required of theliquid crystal display device are severe. For the purpose of stablypresenting image display, eventually, it is the primary requisite toensure the reliability of each individual crystalline TFT.

[0007] The characteristics of a field effect transistor such as the TFTcan be considered as being divided into a linear region where a draincurrent and a drain voltage increase in proportion, a saturation regionwhere the drain current becomes saturated even when the drain voltage isincreased, and a cutoff region where ideally no current flows even whenthe drain voltage is applied. In this specification, the linear regionand the saturation region shall be called an ON region of the TFT, andthe cutoff region an OFF region. Besides, for the sake of convenience,the drain current in the ON region shall be called an ON current, and acurrent in the OFF region an OFF current.

[0008] Concerning the pixel TFT, a gate voltage having an amplitude ofabout 15 to 20 V is applied as a drive condition. Accordingly, the pixelTFT needs to satisfy the characteristics of both the ON region and theOFF region. On the other hand, each peripheral circuit for driving thepixel matrix circuit is constructed on the basis of a CMOS circuit, inwhich importance is chiefly attached to the characteristics of the ONregion.

[0009] In this regard, it is said that the crystalline TFT is stillinferior in point of reliability to a MOS transistor (a transistorfabricated on a single-crystal semiconductor substrate) which is usedfor an LSI, etc. By way of example, when the crystalline TFT iscontinuously driven, such deteriorating phenomena as lowering in thefield effect mobility, decrease in the ON current and increase in theOFF current are sometimes observed. A cause for the deterioratingphenomena is the injection of hot carriers, that is, the hot carrierscreated by a high electric field near the drain of the TFT incur thedeteriorating phenomena.

[0010] In the technical field of the LSIs, an LDD (Lightly Doped Drain)structure has been known as an expedient for decreasing the OFF currentof the MOS transistor and for mitigating a high electric field near thedrain of the MOS transistor. The structure is such that impurity regionsof low concentration are provided outside a channel forming region. Thelow-concentration impurity regions are called LDD regions.

[0011] Even in the crystalline TFT, the formation of an LDD structurehas, of course, been known. The official gazette of Japanese PatentApplication Laid-open No. 7-202210 (1995), for example, discloses atechnique wherein a gate electrode is formed into a structure of twolayers which have widths different from each other, and concretely, inwhich the upper layer is narrower than the lower layer, and ions aresubsequently implanted using the gate electrode as a mask, whereby LDDregions are formed by one time of ion implantation by utilizing thedifferent penetration depths of the ions based on the fact that thethickness of the gate electrode is not uniform. Herein, the gateelectrode overlaps the LDD regions directly.

[0012] Such a structure has been known as a GOLD (Gate-drain OverlappedLDD) structure, a LATID (Large-tilt-angle implanted drain) structure, oran ITLDD (Inverse T LDD) structure. It can mitigate the high electricfield near the drain, thereby to prevent the phenomenon of the hotcarrier injection and to enhance the reliability. In, for example,Mutsuko Hatano, Hajime Akimoto and Takeshi Sakai: IEDM97 TECHNICALDIGEST, pp. 523-526, 1997, a TFT which has a GOLD structure based onside walls formed of silicon has been verified to attain a reliabilitywhich is far superior to those of TFTs of other structures.

[0013] However, the structure laid open in the above paper has theproblem that the OFF current of the TFT increases more than with theconventional LDD structure, and it necessitates a measure foreliminating the problem. Especially in the pixel TFT constituting thepixel matrix circuit, the increase of the OFF current results inaugmenting power dissipation or/and causing abnormality to appear in theimage display. Therefore, the GOLD structure cannot be applied to thecrystalline TFT as it is.

SUMMARY OF THE INVENTION

[0014] The present invention consists in techniques for solving theproblems as stated above, and has for its object to incarnate acrystalline TFT which achieves a reliability equivalent or superior tothat of a MOS transistor and which also attains good characteristics inboth the ON region and the OFF region thereof.

[0015] Another object of the present invention is to incarnate asemiconductor device of high reliability which includes a semiconductorcircuit formed of such crystalline TFTs.

[0016] FIGS. 18(A-1) and 18(B-1) through FIGS. 18(A-4) and 18(B-4)schematically illustrate the structures of TFTs and Vg-Id (gatevoltage-drain current) characteristics attained with the structures, onthe basis of knowledge hitherto obtained. FIG. 18(A-1) is a schematicsectional view showing the simplest structure of the TFT in which asemiconductor layer below a gate electrode consists of a channel formingregion, a source region and a drain region (n⁺ regions). FIG. 18(B-1) isa graph showing the Vg-Id characteristics in which a +Vg side is the ONregion of the TFT, while a −Vg side is the OFF region thereof. Herein, asolid line indicates initial characteristics, and a broken lineindicates characteristics deteriorated by the phenomenon of hot carrierinjection. With the structure, both the ON current and OFF current ofthe TFT are high, and the deteriorations are of large magnitudes.Therefore, the TFT left intact cannot be used for, for example, thepixel TFT of a pixel matrix circuit.

[0017]FIG. 18(A-2) is a schematic sectional view showing the LDDstructure of the TFT in which low-concentration impurity regions (n⁻region) serving as LDD regions are added to the structure depicted inFIG. 18(A-1), and in which the LDD regions and a gate electrode do notoverlap each other. FIG. 18(B-2) is a graph showing the Vg-Idcharacteristics of the TFT. With the structure, the deterioration in theOFF current of the TFT can be suppressed to some extent, but thedeterioration in the ON current of the TFT cannot be prevented. Besides,FIG. 18(A-3) is a schematic sectional view showing the structure (calledthe GOLD structure) of the TFT in which entire LDD regions and a gateelectrode overlap each other. FIG. 18(B-3) is a graph of the Vg-Idcharacteristics corresponding to FIG. 18(A-3). The structure cansuppress the deteriorations to the extent of posing no problem, but itincreases the OFF current of the TFT on the −Vg side more than thestructure depicted in FIG. 18(A-2).

[0018] Accordingly, any of the structures shown in FIGS. 18(A-1),18(A-2) and 18(A-3) cannot satisfy those characteristics of the ONregion and the OFF region which are necessary for the pixel matrixcircuit, simultaneously with the reliability of the TFT. In contrast tothe above structures, a structure shown in FIG. 18(A-4) is such thateach of LDD regions which a gate electrode overlaps consists of a partwhich lies under the gate electrode, and a part which does not lie underthe gate electrode. With the structure, it is possible as seen from FIG.18(B-4) to satisfactorily suppress the deterioration in the ON currentof the TFT and to decrease the OFF current thereof.

[0019] The structure shown in FIG. 18(A-4) has been derived from thefollowing consideration: With the structure as shown in FIG. 18(A-3),when a negative voltage is applied to the gate electrode of then-channel TFT, that is, when the TFT is operated in the OFF region,holes are induced at the interfaces between the LDD regions, which thegate electrode overlaps, and a gate insulating film, with increase inthe negative voltage, and a current path based on the minority carriersas joins the drain region, LDD regions and channel region of the TFT isformed. On this occasion, if the drain region is under the applicationof a positive voltage, the holes will flow to the side of the sourceregion of the TFT. This will be a cause for the increase of the OFFcurrent.

[0020] It can be considered that LDD regions in which the minoritycarriers are not accumulated in spite of the application of the gatevoltage may be provided in order to cut off the above current pathmidway. The present invention pertains to a TFT having such a structure,and a circuit employing the TFTs.

[0021] Accordingly, in one aspect of performance of the presentinvention, a semiconductor device wherein a TFT is formed on asubstrate, the TFT having a semiconductor layer, a gate insulating filmformed on the semiconductor layer, and a gate electrode formed on thegate insulating film; is characterized in that said gate electrodeincludes a first layer which is formed in contact with said gateinsulating film, a second layer which is formed on and inside said firstlayer, and a third layer which is formed in contact with said firstlayer and said second layer; that said semiconductor layer includes achannel forming region, a first impurity region of one conductivitytype, and a second impurity region of said one conductivity type whichis formed between said channel forming region and said first impurityregion; and that a part of said second impurity region of said oneconductivity type lies under said first layer of said gate electrode.

[0022] In another aspect of performance of the present invention, amethod of fabricating a semiconductor device is characterized bycomprising the first step of forming a semiconductor layer on asubstrate which has an insulating surface; the second step of forming agate insulating film in contact with said semiconductor layer; the thirdstep of successively forming a conductive layer (A) and a conductivelayer (B) on said gate insulating film; the fourth step of etching saidconductive layer (B) into a predetermined pattern, thereby to form asecond layer of a gate electrode; the fifth step of doping a selectedregion of said semiconductor layer with an impurity element of oneconductivity type; the sixth step of forming a conductive layer (C) incontact with said conductive layer (A) and said second layer of saidgate electrode; the seventh step of etching said conductive layer (C)and said conductive layer (A) into predetermined patterns, thereby toform a third layer of said gate electrode and a first layer thereof; andthe eighth step of doping a selected region of said semiconductor layerwith an impurity element of said one conductivity type.

[0023] In still another aspect of performance of the present invention,a method of fabricating a semiconductor device is characterized bycomprising the first step of forming a semiconductor layer on asubstrate which has an insulating surface; the second step of forming agate insulating film in contact with said semiconductor layer; the thirdstep of successively forming a conductive layer (A) and a conductivelayer (B) on said gate insulating film; the fourth step of etching saidconductive layer (B) into a predetermined pattern, thereby to form asecond layer of a gate electrode; the fifth step of doping a selectedregion of said semiconductor layer with an impurity element of oneconductivity type; the sixth step of forming a conductive layer (C) incontact with said conductive layer (A) and said second layer of saidgate electrode; the seventh step of etching said conductive layer (C)and said conductive layer (A) into predetermined patterns, thereby toform a third layer of said gate electrode and a first layer thereof; theeighth step of doping a selected region of said semiconductor layer withan impurity element of said one conductivity type; and the ninth step ofremoving parts of said first layer of said gate electrode and said thirdlayer thereof.

[0024] In yet another aspect of performance of the present invention, amethod of fabricating a semiconductor device is characterized bycomprising the first step of forming a first semiconductor layer and asecond semiconductor layer on a substrate which has an insulatingsurface; the second step of forming a gate insulating film on said firstsemiconductor layer and said second semiconductor layer; the third stepof successively forming a conductive layer (A) and a conductive layer(B) on said gate insulating film; the fourth step of etching saidconductive layer (B) into a predetermined pattern, thereby to form asecond layer of a gate electrode; the fifth step of doping a selectedregion of said first semiconductor layer with an impurity element of oneconductivity type; the sixth step of forming a conductive layer (C) incontact with said conductive layer (A) and said second layer of saidgate electrode; the seventh step of etching said conductive layer (C)and said conductive layer (A) into predetermined patterns, thereby toform a third layer of said gate electrode and a first layer thereof; theeighth step of doping selected regions of said first semiconductor layerand said second semiconductor layer with an impurity element of said oneconductivity type; and the ninth step of doping a selected region ofsaid second semiconductor layer with an impurity of a conductivity typeopposite to said one conductivity type.

[0025] Such a TFT is well suited for application to the n-channel TFT ofa CMOS circuit or the pixel TFT of a pixel matrix circuit. In thestructure of the TFT according to the present invention, said firstimpurity region formed in said semiconductor layer functions as a sourceregion or a drain region, and said second impurity region functions asan LDD region. Accordingly, a concentration of an impurity element ofsaid one conductivity type is lower in said second impurity region thanin said first impurity region.

[0026] The semiconductor device according to the present invention canbe so constructed that a retention capacitance is formed of an impurityregion of said one conductivity type which is provided at one end ofsaid semiconductor layer, said gate insulating film, and a wiring linewhich is constituted by said first layer of said gate electrode, saidsecond layer thereof and said third layer thereof, and that saidretention capacitance is connected to a source or a drain of said TFT.

[0027] Further, the semiconductor device according to the presentinvention is characterized in that said first layer of said gateelectrode and said third layer thereof are formed containing at leastone member selected from the group consisting of elements of silicon(Si), titanium (Ti), tantalum (Ta), tungsten (W) and molybdenum (Mo),and a compound which contains any of said elements as its component, andthat said second layer of said gate electrode is formed containing atleast one member selected from the group consisting of elements ofaluminum (Al) and copper (Cu), and a compound which contains any of saidelements as its principal component.

BRIEF DESCRIPTION OF THE DRAWINGS

[0028]FIG. 1 is a sectional view of TFTs in an aspect of performance ofthe present invention;

[0029]FIGS. 2A and 2B are diagrams for explaining the positionalrelationship between a gate electrode and a second impurity region;

[0030]FIGS. 3A through 3C are sectional views showing a process forfabricating TFTs in the first embodiment of the present invention;

[0031]FIGS. 4A through 4C are sectional views showing the process forfabricating the TFTs in the first embodiment;

[0032]FIG. 5 is a sectional view showing the process for fabricating theTFTs in the first embodiment;

[0033]FIGS. 6A through 6C are sectional views showing a process forfabricating TFTs in the second embodiment of the present invention;

[0034]FIG. 7 is a sectional view showing the process for fabricating theTFTs in the second embodiment;

[0035]FIGS. 8A through 8C are sectional views showing a process forfabricating TFTs in the third embodiment of the present invention;

[0036]FIGS. 9A through 9C are sectional views showing a process forfabricating TFTs in the fourth embodiment of the present invention;

[0037]FIG. 10 is a sectional view showing the process for fabricatingthe TFTs in the fourth embodiment;

[0038]FIGS. 11A through 11C are sectional views showing a process forfabricating TFTs in the fifth embodiment of the present invention;

[0039]FIGS. 12A through 12C are sectional views showing the process forfabricating the TFTs in the fifth embodiment;

[0040]FIG. 13 is a sectional view showing the process for fabricatingthe TFTs in the fifth embodiment;

[0041]FIG. 14 is a perspective view of an active matrix substrate;

[0042]FIGS. 15A and 15B are top plan views of an active matrix circuitand a CMOS circuit, respectively;

[0043]FIGS. 16A and 16B are sectional views showing a process forfabricating a liquid crystal display device;

[0044]FIG. 17 is a diagram showing the construction of a gate electrode;

[0045] FIGS. 18(A-1), 18(B-1) through FIGS. 18(A-4), 18(B-4) arediagrams for explaining the structures and electrical characteristics ofTFTs;

[0046]FIGS. 19A and 19B are schematic sectional views showing a processfor fabricating a crystalline silicon film;

[0047]FIGS. 20A and 20B are schematic sectional views showing anotherprocess for fabricating a crystalline silicon film;

[0048]FIGS. 21A and 21B are schematic sectional views showing stillanother process for fabricating a crystalline silicon film;

[0049]FIG. 22 is a sectional view showing a process for fabricatingTFTs;

[0050]FIGS. 23A, 23B and 23C are a circuit diagram, a top plan view anda sectional structural view of an inverter circuit, respectively;

[0051]FIG. 24 is a graph showing a light transmittance characteristic ofa ferroelectric liquid crystal;

[0052]FIGS. 25A through 25H are schematic views showing examples ofsemiconductor devices;

[0053]FIGS. 26A through 26D are schematic views for explaining theconstruction of a projector;

[0054]FIGS. 27A and 27B are a top plan view and a sectional view of anactive matrix type EL display device, respectively;

[0055]FIGS. 28A and 28B are a top plan view and a sectional view of anactive matrix type EL display device, respectively;

[0056]FIG. 29 is a sectional view of a pixel portion in an active matrixtype EL display device;

[0057]FIGS. 30A and 30B are top plan view and a circuit diagram of apixel portion in an active matrix EL display device, respectively;

[0058]FIG. 31 is a sectional view of a pixel portion in an active matrixtype EL display device;

[0059]FIGS. 32A through 32C are circuit diagrams of a pixel portion inan active matrix EL display device.

PREFERRED EMBODIMENTS OF THE INVENTION

[0060] An aspect of performance of the present invention will bedescribed with reference to FIG. 1. A glass substrate, a plasticssubstrate, a ceramics substrate, or the like can be employed as asubstrate 101 which has an electrically insulating substrate. It is alsoallowed to employ a silicon substrate or a stainless steel substratewhose surface is formed with an electrically insulating film such assilicon oxide film. A quartz substrate is also usable.

[0061] A underlying film 102 is formed on that surface of the substrate101 on which TFTs are to be formed. The underlying film 102 may be asilicon oxide film, a silicon nitride film or a silicon oxide nitridefilm, which may be formed by plasma CVD or sputtering. This underlyingfilm 102 is provided in order to prevent an impurity from diffusing fromthe substrate 101 into semiconductor layers. By way of example, theunderlying film 102 may well have a double-layer structure in which asilicon nitride film being 25 to 100 nm thick is formed and is overlaidwith a silicon oxide film being 50 to 200 nm thick.

[0062] The semiconductor layers to be formed in contact with theunderlying film 102 should desirably be made of a crystallinesemiconductor which is produced in such a way that an amorphoussemiconductor film formed by a film forming method, such as plasma CVD,reduced-pressure CVD or sputtering, is crystallized by a solid-phasegrowth method based on laser annealing or thermal annealing. It is alsopossible to apply a microcrystalline semiconductor film which is formedby the above film forming method. Semiconductor materials which areapplicable here, include silicon, germanium, a silicon-germanium alloy,and silicon carbide. In addition, compound semiconductor materials suchas gallium arsenide are usable.

[0063]FIG. 1 illustrates the sectional structure of an n-channel TFT anda p-channel TFT. The gate electrodes of the n-channel TFT and p-channelTFT are constituted by their first layers, second layers and thirdlayers. The first layers 113, 116 of the respective gate electrodes areformed in contact with a gate insulating film 103. Besides, the secondlayers 114, 117 of the respective gate electrodes are formed shorterthan the first layers thereof in the directions of the channel lengthsof the corresponding TFTs and are provided on the first layers 113, 116of the respective gate electrodes. Further, the third layers 115, 118 ofthe respective gate electrodes are formed on the first layers 113, 116and second layers 114, 117 thereof.

[0064] The first layers 113, 116 of the respective gate electrodes areformed of a material which is selected from the elements of silicon(Si), titanium (Ti), tantalum (Ta), tungsten (W) and molybdenum (Mo), ora material which contains any of the elements as its component. By wayof example, the first layers 113, 116 may well be made of a W—Mocompound, tantalum nitride (TaN) or tungsten nitride (WN). The thicknessof each of the first layers 113, 116 may be set at 10 to 100 nm,preferably at 20 to 50 nm.

[0065] The second layers 114, 117 of the respective gate electrodesshould desirably be formed of a material of low electric resistivitywhich contains aluminum (Al) or copper (Cu) as its component. Thethickness of each of the second layers 114, 117 may be set at 50 to 400nm, preferably at 100 to 200 nm. The second layers 114, 117 are formedfor the purpose of lowering the electric resistances of thecorresponding gate electrodes, and their thicknesses may be determinedin consideration of both the lengths and electric resistances of buslines and gate wiring lines which are to be connected to thecorresponding gate electrodes.

[0066] Likewise to the first layers 113, 116 of the respective gateelectrodes, the third layers 115, 118 thereof are formed of a materialwhich is selected from the elements of silicon (Si), titanium (Ti),tantalum (Ta), tungsten (W) and molybdenum (Mo), or a material whichcontains any of the elements as its component. The thickness of each ofthe third layers 115, 118 may be set at 50 to 400 nm, preferably at 100to 200 nm.

[0067] Anyway, the first layers, second layers and third layers of therespective gate electrodes may be formed as the films of the abovematerials by sputtering, and they may be patterned into predeterminedshapes by wet etching and dry etching. Here, for forming the thirdlayers of the respective gate electrodes so as to cover the secondlayers thereof, it is required, not only to control the thicknesses ofthese second layers as explained above, but also to set sputteringconditions appropriately. By way of example, it is an effectiveexpedient to set comparatively low speeds as the film forming rates ofthe films to-be-formed.

[0068] As shown in FIG. 1, each of the gate electrodes is constructedinto a clad structure in which the second layer of the gate electrode isenclosed with the first layer and third layer thereof, whereby thethermal resistance of the gate electrode can be enhanced. The secondlayer of the gate electrode should desirably be made of the material oflow electric resistivity such as Al or Cu. In this regard, when thematerial is heated at or above 450 degrees centigrade, there occur theproblems that a hillock appears and that the material diffuses into thesurrounding insulating film and semiconductor layer. Such phenomena,however, can be prevented by the clad structure in which the secondlayer is enclosed with the material of any of Si, Ti, Ta, W and Mo orthe material containing any of the elements as its component.

[0069] The semiconductor layer of the n-channel TFT consists of achannel forming region 104, first impurity regions 107, 108, and secondimpurity regions 105 and 106 a, 106 b which are formed in contact withthe channel forming region 104. Both the first semiconductor regions andthe second impurity regions are doped with an impurity element whichbestows the n-conductivity type. On this occasion, the concentration ofthe impurity element in the first impurity regions is set at 1×10²⁰ to1×10²¹ atoms/cm³, preferably 2×10²⁰ to 5×10²⁰ atoms/cm³, while theconcentration-of the impurity element in the second impurity regions isset at 1×10¹⁶ to 5×10¹⁹ atoms/cm³, typically 5×10¹⁷ to 5×10¹⁸ atoms/cm³.The first impurity regions 107, 108 are function as the source regionand drain region of the n-channel TFT, respectively.

[0070] On the other hand, the third impurity region 111 or 112 a, 112 bof the p-channel TFT function as the source region or drain regionthereof. The third impurity region 112 b contains the impurity elementbestowing the n-conductivity type, at the same concentration as that ofthe first impurity regions 107, 108 of the n-channel TFT, but it isdoped with an impurity element bestowing the p-conductivity type, at aconcentration which is 1.5 to 3 times as high as the concentration ofthe n-type impurity element. The doping of the second impurity regions105 and 106 a, 106 b with the impurity element is carried out by amethod in which the impurity element bestowing the n-conductivity typeas a dopant is passed through the first layer 113 of the gate electrodeand the gate insulating film 103 so as to be introduced into thesemiconductor layer.

[0071] As illustrated in FIGS. 2A and 2B, the second impurity regions106 a, 106 b can be divided into the second impurity region 106 a whichlies under the gate electrode through the gate insulating film 103, andthe second impurity region 106 b which does not lie under the gateelectrode. That is, they consist of an LDD region (a GOLD region) whichthe gate electrode overlaps, and an LDD region which the gate electrodedoes not overlap. The formation of the divided regions is implemented bythe first step of introducing the impurity element of one conductivitytype (the formation of the second impurity regions), and the second stepof introducing the impurity element of one conductivity type (theformation of the first impurity regions). On this occasion, photoresistmay be utilized as each mask. This is a method which is very convenientwhen circuits of different drive voltages are to be fabricated on anidentical substrate. TABLE 1 Drive Channel Voltage Length Y X BufferCircuit 16 ± 2 V 5.0 ± 1.5 μm 2.5 ± 0.3 μm 2.5 ± 0.5 μm 20 ± 3 V 5.0 ±2.0 μm 3.0 ± 0.5 μm 3.0 ± 0.5 μm Logic Circuit  5 ± 1 V 3.0 ± 1.0 μm 0.5± 0.3 μm 0.5 ± 0.3 μm 10 ± 1 V 3.5 ± 1.0 μm 2.0 ± 0.3 μm 1.0 ± 0.5 μmAnalog Switch 16 ± 2 V 3.0 ± 1.0 μm 1.5 ± 0.5 μm 1.5 ± 0.5 μm PixelCircuit 16 ± 2 V 3.0 ± 1.0 μm 1.5 ± 0.5 μm 1.5 ± 0.5 μm

[0072] Table 1 tabulates examples of the design values of TFTs which areused for the buffer circuit portion, logic circuit portion, analogswitch portion and pixel matrix circuit portion of a liquid crystaldisplay device. Herein, not only the channel lengths of the TFTs, butalso the length Y of the second impurity region 106 a underlying thegate electrode and the length X of the second impurity region 106 b notunderlying the gate electrode can be set considering the drive voltagesof the individual TFTs.

[0073] Regarding the TFTs of the shift register circuit of a drivecircuit and the TFTs of the buffer circuit, importance is basicallyattached to the characteristics of the ON region of each TFT. Therefore,the TFT may well have the so-called GOLD structure and need not alwaysbe provided with the second impurity region 106 b not underlying thegate electrode. However, in a case where the region 106 b is daringlyprovided, its length may be set within a range of 0.5 to 3 μm inconsideration of the drive voltage. Anyway, the value of the secondimpurity region 106 b not underlying the gate electrode should desirablybe enlarged with rise in the drive voltage, in consideration of thewithstand voltage thereof.

[0074] Besides, regarding the TFTs which are provided in the analogswitches and the pixel matrix circuits, the OFF current of each TFT mustnot increase. In case of a drive voltage of 16 V by way of example,therefore, the length of the second impurity region 106 a underlying thegate electrode is set at 1.5 μm, and that of the second impurity region106 b not underlying the gate electrode is set at 1.5 μm, with thechannel length set at 3 μm. Of course, the present invention is notrestricted to the design values mentioned here, but a person who designssuch TFTs may properly determine the lengths.

[0075] Meanwhile, as illustrated in FIG. 17, in the present invention,the lengths of the first layer 1701, second layer 1702 and third layer1703 of a gate electrode in the direction of the channel length of a TFTto be fabricated relate deeply with the dimensions of the TFT. Thelength of the second layer 1702 of the gate electrode in the channellength direction corresponds substantially to the channel length L1.Herein, the channel length L1 may be set at a value of 0.1 to 10 μm,typically 0.2 to 5 μm.

[0076] In addition, the length L6 of a second impurity region 1705 canbe set at will by masking with photoresist as explained before. Thislength L6 should desirably be set at 0.2 to 6 μm, typically 0.6 to 3 μm.

[0077] That length L4 of the second impurity region 1705 which thisregion underlies the gate electrode, relates closely with the length L2of the first layer 1701 of the gate electrode. The length L4 shoulddesirably be set at 0.1 to 4 μm, typically 0.5 to 3 μm. Besides, thatlength L5 of the second impurity region 1705 which this region does notunderlie the gate electrode may usually be set at 0.1 to 3 μm, typically0.3 to 2 μm, though the region of this length L5 not underlying the gateelectrode need not always be provided as explained before. Here, thelengths L4 and L5 may be determined, for example, on the basis of thedrive voltage of the TFT as explained before.

[0078] In the case illustrated in FIG. 1, the channel forming region1704 may well be doped with boron at a concentration of 1×10¹⁶ to 5×10¹⁸atoms/cm³ beforehand. The element boron is introduced for controllingthe threshold voltage of the TFT, and it can be replaced with any otherelement which can bring forth the same effect.

[0079] As thus far described, according to the present invention, therespective gate electrodes are formed of the first layers 113, 116, thesecond layers 114, 117 and the third layers 115, 118, and they areconstructed as the clad structure in which the second layers 114, 117 ofthe respective gate electrodes are enclosed with the first layers 113,116 and third layers 115, 118 thereof as shown in FIG. 1. As anotherfeature, in at least the n-channel TFT, a part of the second impurityregion 106 provided in the semiconductor layer lies under such a gateelectrode through the gate insulating film 103.

[0080] In the n-channel TFT, the second impurity region may well beprovided only on the side of the drain region (the side of the firstimpurity region 108 in FIG. 1) with respect to the channel formingregion 104. Besides, in a case where the characteristics of both the ONregion and OFF region of the TFT are required as of the pixel TFT of thepixel matrix circuit, the second impurity regions should desirably beprovided on both the side of the source region (the side of the firstimpurity region 107 in FIG. 1) and the side of the drain region (theside of the first impurity region 108 in FIG. 1) with respect to thechannel forming region 104.

[0081] On the other hand, in the p-channel TFT, the semiconductor layeris formed with a channel forming region 109, and the third impurityregions 111 and 112 a, 112 b. Of course, the p-channel TFT may well beconstructed into the same structure as that of the n-channel TFTaccording to the present invention. Since, however, the p-channel TFToriginally has a high reliability, it is more preferable that the ONcurrent of the p-channel TFT is increased so as to balance thecharacteristics thereof with those of the n-channel TFT. In the casewhere the present invention is applied to the CMOS circuit asillustrated in FIG. 1, the balance of the characteristics is especiallyimportant. However, no problem is posed when the structure according tothe present invention is applied to the p-channel TFT.

[0082] When the n-channel TFT and the p-channel TFT have been completedin this way, they are covered with a first interlayer insulating film119 and are provided with source wiring lines 120, 121 and a drainwiring line 122. In the construction illustrated in FIG. 1, a siliconnitride film is thereafter provided as a passivation film 123. Further,a second interlayer insulating film 124 made of a resin material isprovided. The second interlayer insulating film 124 need not berestricted to the resin material. However, in the case of applying thepresent invention to the liquid crystal display device by way ofexample, the use of the resin material is preferable for ensuring theflatness of the surface of the device.

[0083] Although FIG. 1 has exemplified the CMOS circuit in which then-channel TFTs and the p-channel TFTs are complementarily combined, thepresent invention is also applicable to an NMOS circuit employingn-channel TFTs, and the pixel matrix circuit of the liquid crystaldisplay device.

[0084] The construction of the present invention elucidated above willbe described in more detail in conjunction with embodiments below.

[0085] [Embodiment 1]

[0086] In this embodiment, the construction of the present inventionwill be described concerning a method in which a pixel matrix circuit,and a CMOS circuit being the basic form of a drive circuit to beprovided around the pixel matrix circuit are fabricated simultaneously.

[0087] Referring to FIGS. 3A through 3C, a substrate 301 is anon-alkaline glass substrate which is typified by 1737 Glass Substrateof Corning Incorporated. An underlying film 302 is formed on thatsurface of the substrate 301 on which TFTs are to be formed, by plasmaCVD or sputtering. Though not shown, a silicon nitride film being 25 to100 nm, typically 50 nm thick, and a silicon oxide film being 50 to 300nm, typically 150 nm thick, are formed as the underlying film 302.

[0088] Alternatively, the underlying film 302 may be formed by stackinga silicon oxide nitride film which is produced from SiH₄, NH₃ and N₂O byplasma CVD to a thickness of 10 to 200 nm (preferably 50 to 100 nm), anda silicon oxide nitride film which is similarly produced from SiH₄ andN₂O to a thickness of 50 to 200 nm (preferably 100 to 150 nm).

[0089] Subsequently, an amorphous silicon film being 50 nm thick isformed on the underlying film 302 by plasma CVD. The amorphous siliconfilm should desirably be dehydrogenated by heating for several hourspreferably at 400 to 550 degrees centigrade though the conditions of thedehydrogenation depend also upon the hydrogen content of the depositedfilm, so as to decrease the hydrogen content to 5 atomic % or below,followed by the step of crystallization. Alternatively, an amorphoussilicon film may well be formed by another producing method such assputtering or vapor deposition, but impurity elements such as oxygen andnitrogen contained in the produced film should desirably be decreasedsufficiently.

[0090] Here, since both the underlying film and the amorphous siliconfilm can be produced by the plasma CVD, they may well be consecutivelyformed in vacuum. In this case, the substrate is not once exposed to theatmospheric air after the formation of the underlying film, whereby thecontamination of the surface of the resulting substrate can be preventedto relieve the discrepancy of the characteristics of TFTsto-be-fabricated.

[0091] The step of crystallizing the amorphous silicon film may well beimplemented by a known technique such as laser annealing or thermalannealing. In this embodiment, a crystalline silicon film is formed insuch a way that the light of a KrF excimer laser of pulse oscillationtype is condensed into the shape of a lineal beam, with which theamorphous silicon film is irradiated.

[0092] In the case of implementing the crystallization by the laserannealing, an excimer laser or argon laser of pulse oscillation type orcontinuous light emission type is used as a light source for thecrystallization. The light source may well be constituted by thefundamental harmonic of the output of a YAG laser and the secondharmonic, third harmonic and fourth harmonic thereof. In the case ofemploying the excimer laser of pulse oscillation type, the laserannealing is implemented by shaping the laser light into the linealbeam. Although the conditions of the laser annealing are properlyselected by a person who controls the process, they are set at, forexample, a laser pulse oscillation frequency of 30 Hz and a laser energydensity of 100 to 500 mJ/cm² (typically, 300 to 400 mJ/cm²). The linealbeam is projected over the whole substrate surface, and the overlap rateof the traces of the lineal beam on this occasion is set at 80 to 98%

[0093] In this embodiment, the crystalline silicon film forsemiconductor layers is formed from the amorphous silicon film. It isalso allowed, however, to employ a microcrystalline silicon film or todirectly form the crystalline silicon film.

[0094] The crystalline silicon film thus formed is patterned into thesemiconductor layers 303, 304 and 305 which are insular.

[0095] Subsequently, the insular semiconductor layers 303, 304 and 305are covered with a gate insulating film 306 whose principal component issilicon oxide or silicon nitride. The gate insulating film 306 may be asilicon oxide nitride film which is formed from starting materials ofN₂O and SiH₄ by plasma CVD to a thickness of 10 to 200 nm, preferably 50to 150 nm. Here, the silicon oxide nitride film is formed to a thicknessof 100 nm.

[0096] The gate insulating film 306 is overlaid with gate electrodeseach of which is constituted by the first layer, second layer and thirdlayer thereof. First, an electrically conductive layer (A) 307 and anelectrically conductive layer (B) 308 are formed. The conductive layer(A) 307 may be formed of a material selected from the elements of Ti,Ta, W and Mo, and a compound containing any of the elements as itscomponent may well be employed considering an electric resistance and athermal resistance. In addition, the thickness of the conductive layer(A) 307 needs to be set at 10 to 100 nm, preferably 20 to 50 nm. Here, aTi film is formed to a thickness of 50 nm by sputtering.

[0097] It is important to control the thicknesses of the gate insulatingfilm 306 and the conductive layer (A) 307. The reason therefor is that,at the step of first doping with an impurity as is carried out later,the impurity bestowing the n-conductivity type is passed through thegate insulating film 306 and the conductive layer (A) 307 so as to beintroduced into the semiconductor layers 303, 305. In actuality, theconditions of the step of the first doping with the impurity aredetermined considering the thicknesses of the gate insulating film 306and the conductive layer (A) 307, and the concentration of the impurityelement as a dopant. It has been previously confirmed that thesemiconductor layers can be doped with the impurity element within theranges of the thicknesses. However, when the thicknesses fluctuate 10%or more from the original set values, the concentration of the dopantimpurity lowers.

[0098] The conductive layer (B) 308 should preferably be formed of amaterial selected from the elements of Al and Cu. This layer (B) 308 isprovided in order to lower the electric resistances of the gateelectrodes, and is formed to a thickness of 50 to 400 nm, preferably 100to 200 nm. In case of employing the element Al, it is allowed to usepure Al or to use an Al alloy in which an element selected from theelements of Ti, Si and Sc is added 0.1 to 5 atomic %. On the other hand,in case of employing the element Cu, a silicon nitride film being 30 to100 nm thick should preferably be provided on the surface of the gateinsulating film 306 though not shown.

[0099] Here, an Al film in which the element Sc is added 0.5 atomic % isformed to a thickness of 200 nm by sputtering (FIG. 3A).

[0100] At the next step, using a known patterning technique, a resistmask is formed, and the conductive layer (B) 308 is partly removed.Here, since the conductive layer (B) 308 is formed of the Al film dopedwith 0.5 atomic % of Sc, the step of the removal is implemented by wetetching with a solution of phosphoric acid. Thus, the second layers 309,310, 311, 312 of the gate electrodes are formed of the remaining partsof the conductive layer (B) as shown in FIG. 3B. Regarding the lengthsof the second layers of the respective gate electrodes in the directionsof the channel lengths of the corresponding TFTs, the length of each ofthe second layers 309, 310 of the gate electrodes constituting the CMOScircuit is set at 3 μm, and the length of each of the second layers 311,312 of the gate electrodes constituting the multigate structure of thepixel matrix circuit is set at 2 μm.

[0101] The step of the removal can also be carried out by dry etching.However, the wet etching is more favorable for removing the unnecessaryregions of the conductive layer (B) 308 without damaging the conductivelayer (A) 307 and with a good selectivity.

[0102] Moreover, this embodiment is so constructed that a retentioncapacitance is provided on the side of the drain of the pixel TFT whichconstitutes the pixel matrix circuit. On this occasion, the capacitancewiring line 313 of the retention capacitance is formed of the samematerial as that of the conductive layer (B).

[0103] Thereafter, a resist mask 314 is formed in a domain where thep-channel TFT is to be formed, and the step of the first doping with theimpurity element bestowing the n-conductivity type is implemented.Phosphorus (P), arsenic (As), antimony (Sb), etc. are known as impurityelements which bestows the n-conductivity type on a crystallinesemiconductor material. Here, the element phosphorus is employed, andion doping with phosphine (PH₃) is used for the first doping. Since, atthis step, the element phosphorus is passed through the gate insulatingfilm 306 and the conductive layer (A) 307 so as to dope the underlyingsemiconductor layers with this element, the acceleration voltage of theion doping is set at a somewhat high voltage of 80 keV. Theconcentration of the element phosphorus to be introduced into thesemiconductor layers as a dopant, should preferably be set within arange of 1×10¹⁶ to 5×10¹⁹ atoms/cm³. Here, the concentration is set at1×10¹⁸ atoms/cm³. Thus, regions 315, 316, 317, 318, 319, 320 doped withthe element phosphorus are formed in the semiconductor layers (FIG. 3B).

[0104] After removing the resist mask 314, an electrically conductivelayer (C) 321 to become the third layers of the respective gateelectrodes is formed in close contact with the conductive layer (A) 307,the second layers 309, 310, 311, 312 of the gate electrodes and thewiring line 313 of the retention capacitance. The conductive layer (C)321 may be formed of a material selected from the elements of Ti, Ta, Wand Mo, and a compound containing any of the elements as its componentmay well be employed considering an electric resistance and a thermalresistance. In addition, the thickness of the conductive layer (C) 321needs to be set at 10 to 100 nm, preferably 20 to 50 nm. Here, a Ta filmis formed to a thickness of 50 nm by sputtering (FIG. 3C).

[0105] At the next step, using a known patterning technique, a resistmask is formed, and the conductive layer (C) 321 and the conductivelayer (A) 307 are partly removed. Here, the step of the removal isimplemented by dry etching. The conditions of the dry etching of theconductive layer (C) 321 made of the element Ta are that CF4 and O2 arerespectively introduced 80 SCCM and 20 SCCM, that a pressure of 100mTorr is held, and that a high-frequency power of 500 W is supplied. Onthis occasion, the etching rate of the Ta film is 60 nm/minute. Besides,the conditions of the etching of the conductive layer (A) 307 made ofthe element Ti are that SiCl₄, Cl₂ and BCl₃ are respectively introduced40 SCCM, 5 SCCM and 180 SCCM, that a pressure of 80 mTorr is held, andthat a high-frequency power of 1200 W is supplied. On this occasion, theetching rate of the Ti film is 34 nm/minute.

[0106] A slight residue is sometimes observed after the etching, but itcan be eliminated by washing the resulting substrate with a detergentSPX or a solution of EKC or the like. Under the above etchingconditions, the etching rate of the gate insulating film 306 underlyingthe layers 321 and 307 is 18 to 38 nm/minute. Attention needs to be paidto the fact that, when the etching time period of the removal step islong, the gate insulating film 306 is etched excessively.

[0107] Thus, the first layers 322, 323, 324, 325 of the respective gateelectrodes and the third layers 327, 328, 329, 330 thereof are formed.The first layer of each gate electrode and the third layer thereof areformed having equal lengths in the direction of the channel length. Morespecifically, the first layers 322, 323 of the corresponding gateelectrodes and the third layers 327, 328 thereof have lengths of 6 μm.Besides, the first layers 324, 325 of the corresponding gate electrodesand the third layers 329, 330 thereof have lengths of 4 μm (FIG. 4A).

[0108] In this way, the respective gate electrodes made up of the firstlayers, second layers and third layers are completed. Besides, theretention capacitance is provided on the drain side of the pixel TFTconstituting the pixel matrix circuit. On this occasion, the wiring lineportions 326, 331 of the retention capacitance are respectively formedfrom the conductive layer (A) and the conductive layer (C).

[0109] Subsequently, as illustrated in FIG. 4B, resist masks 332, 333,334, 335, 336 are formed so as to carry out the step of second dopingwith an impurity element bestowing the n-conductivity type. The step ofthe second doping is also implemented by ion doping with phosphine(PH₃). Also at this step, phosphorus as a dopant is passed through thegate insulating film 306 to be introduced into the underlyingsemiconductor layers, and hence, the acceleration voltage of the iondoping is set at a somewhat high voltage of 80 keV. Thus, regions 337,338, 339, 340, 341, 342, 343 doped with the element phosphorus areformed. The concentration of the element phosphorus in these regions 337through 343 is higher than in the regions formed by the step of thefirst doping with the impurity element bestowing the n-conductivitytype. The phosphorus concentration should preferably be set at 1×10¹⁹ to1×10²¹ atoms/cm³. Here, it is set at 1×10²⁰ atoms/cm³.

[0110] At this step, the lengths of the resist masks 332, 333, 334, 335in the channel length direction are important for determining thestructures of the respective TFTs. Especially in each of the n-channelTFTs, the part of the second impurity region lying under the gateelectrode and the part thereof not lying under the gate electrode can bedetermined at will within a certain range in accordance with the lengthof the first and third layers of the gate electrode and the length ofthe resist mask. In this embodiment, the length of the first layer 322and third layer 327 of the corresponding gate electrode is 6 μm, andthat of the first layers 324, 325 and third layers 329, 330 of thecorresponding gate electrodes is 4 μm. Therefore, the resist mask 332 isset at a length of 9 μm, and the resist masks 334, 335 are set at alength of 7 μm. Of course, the individual lengths mentioned here aremere examples, and they may be determined considering the drive voltagesof the corresponding TFTs as explained before.

[0111] Subsequently, domains where the n-channel TFTs are to be formedare covered with resist masks 344, 345 so as to carry out the step ofthird doping at which only the domain where the p-channel TFT is to beformed is doped with an impurity element bestowing the p-conductivitytype. Boron (B), aluminum (Al) and gallium (Ga) are known as impurityelements which bestows the p-conductivity type. Here, the impurityelement boron is employed, and ion doping is implemented with diborane(B₂H₆). Also in this case, the acceleration voltage of the ion doping isset at 80 keV so as to introduce the element boron at a concentration of2×10²⁰ atoms/cm³. Thus, third impurity-regions 346 a, 346 b, 347 a, 347b doped with the element boron at high concentrations are formed asillustrated in FIG. 4C. Although the third impurity regions 346 b, 347 bcontain the element phosphorus introduced by the preceding step, theyare doped with the element boron at the concentration being doublehigher, so that no problem is involved (FIG. 4C).

[0112] After the steps illustrated up to FIG. 4C have ended, the resistmasks 344, 345 are removed so as to carry out the step of forming afirst interlayer insulating film 374, as shown in FIG. 5. The firstinterlayer insulating film 374 is formed by a double-layer structure.Initially, a silicon nitride film 374 a is formed to a thickness of 50nm. The silicon nitride film 374 a is formed by plasma CVD under theconditions that SiH₄, NH₃ and N₂ are respectively introduced 5 SCCM, 40SCCM and 100 SCCM, that a pressure of 0.7 Torr is held, and that ahigh-frequency power of 300 W is supplied. Subsequently, a silicon oxidefilm 374 b is formed to a thickness of 950 nm under the conditions thatTEOS and O₂ ate respectively introduced 500 SCCM and 50 SCCM, that apressure of 1 Torr is held, and that a high-frequency power of 200 W issupplied. In this manner, the silicon nitride film 374 a and the siliconoxide film 374 b which are 1 μm thick in total constitute the firstinterlayer insulating film 374.

[0113] The silicon nitride film 374 a formed here is necessary forcarrying out the next step of heat treatment. In this embodiment, eachgate electrode is formed into the clad structure as explained before.This structure is so constructed that the second layer of the gateelectrode formed of Al is enclosed with the first layer thereof formedof Ti and the third layer thereof formed of Ta. The element Ta iseffective to prevent the element Al from forming a hillock and leakingto the surroundings, but it has the drawback that it is immediatelyoxidized when heated at or above 400 degrees centigrade under the normalpressure. As a result, the electrical resistance of the third layer madeof the element Ta increases. However, when the surface of the thirdlayer is covered with the silicon nitride film 374 a of the firstinterlayer insulating film 374, the oxidation is preventable.

[0114] The step of the heat treatment needs to be implemented foractivating the impurity elements bestowing the n-conductivity type andp-conductivity type as have been introduced at the respectiveconcentrations. This step may be implemented by thermal annealing withan electric heating furnace, laser annealing with the excimer laserstated before, or rapid thermal annealing (RTA) with a halogen lamp. Thelaser annealing can activate the impurity elements at a lower substrateheating temperature, but it is difficult of activating them even in theregions concealed under the gate electrodes. Accordingly, the thermalannealing is employed here. Conditions in this case are a nitrogenatmosphere, and a heating temperature of 300 to 700 degrees centigrade,preferably 350 to 550 degrees centigrade. Here, the heat treatment iscarried out at 450 degrees centigrade for 2 hours.

[0115] The first interlayer insulating film 374 is thereafter formed bypatterning with contact holes which reach the source regions and drainregions of the respective TFTs. Further, source wiring lines 375, 376,377 and drain wiring lines 378, 379 are formed. In this embodiment, eachof the wiring lines has a triple-layer structure, not shown, which isformed in such a way that a Ti film being 100 nm thick, an Al filmcontaining Ti and being 300 nm thick, and a Ti film being 150 nm thickare consecutively deposited by sputtering.

[0116] In addition, a passivation film 380 is formed covering the sourcewiring lines 375, 376, 377 as well as the drain wiring lines 378, 379and the first interlayer insulating film 374. The passivation film 380is formed as a silicon nitride film to a thickness of 50 nm. Further, asecond interlayer insulating film 381 made of an organic resin is formedto a thickness of about 1000 nm. Usable as the organic resin arepolyimide, acrylic resin, polyimidoamide, etc. The merits of the use ofthe organic resin film are that a method for forming the film is easy,that a parasitic capacitance can be lowered owing to the smalldielectric constant of the organic resin, and that the flatness of thesurface of the film is excellent. Incidentally, it is possible to employorganic resins other than mentioned above. Here, polyimide of the typewhich is thermally polymerized after application on the substrate isemployed, and it is baked at 300 degrees centigrade.

[0117] By the steps thus far described, the gate electrodes of the cladstructure are formed, and the n-channel TFT of the CMOS circuit isformed with a channel forming region 348, first impurity regions 360,361, and second impurity regions 349 a, 349 b, 350 a, 350 b. Here, eachof the parts 349 a, 350 a of the second impurity regions underlying thegate electrode has a length of 1.5 μm, while each of the parts 349 b,350 b (LDD regions) of the second impurity regions not underlying thegate electrode has a length of 1.5 μm. Besides, the first impurityregion 360 functions as the source region of the TFT, and the firstimpurity region 361 as the drain region.

[0118] Likewise, the p-channel TFT of the CMOS circuit is formed withthe gate electrode of the clad structure, and it is formed with achannel forming region 362, and third impurity regions 363 a, 363 b, 364a, 364 b. The third impurity regions 363 a, 363 b serve as the sourceregion of the TFT, and the third impurity regions 364 a, 364 b as thedrain region.

[0119] In addition, the pixel TFTs of the pixel matrix circuit areformed with channel forming regions 365, 369, first impurity regions368, 372, and second impurity regions 366, 367, 370, 371. The secondimpurity regions can be divided into parts 366 a, 367 a, 370 a, 371 aunderlying the corresponding gate electrodes, and parts 366 b, 367 b,370 b, 371 b not underlying the gate electrodes.

[0120] In this way, an active matrix substrate in which the CMOS circuitand the pixel matrix circuit are formed on the substrate 301 isfabricated as shown in FIG. 5. Besides, the retention capacitanceis-simultaneously formed on the drain side of the pixel TFT of the pixelmatrix circuit.

[0121] [Embodiment 2]

[0122] In this embodiment, there will be described another aspect ofperformance in which a pixel matrix circuit, and a CMOS circuit beingthe basic form of a drive circuit to be provided around the pixel matrixcircuit are fabricated simultaneously in the same manner as inEmbodiment 1.

[0123] First, as in Embodiment 1, the steps of FIGS. 3A through 3C andFIG. 4A are carried out.

[0124]FIG. 6A illustrates the state in which each of the gate electrodesis formed of the first layer, the second layer and the third layer. Thesubstrate in this state is formed with resist masks 601, 602, 603, 604,605, and is subjected to the step of doping with an impurity elementwhich bestows the n-conductivity type. Thus, first impurity regions 606,607, 608, 609, 610, 611, 612 are formed (FIG. 6B).

[0125] Each of the resist masks 601, 602 formed here is in a shape inwhich an LDD region is formed on only the side of the drain region ofthe TFT. In other words, that part of the resist mask which masks asecond impurity region from above a gate insulating film is formed ononly one side with respect-to a channel forming region.

[0126] The formation of such a resist mask is especially effective forthe n-channel TFT of the CMOS circuit. Since the LDD region is formed ononly one side, the series resistance component of the TFT is permittedto be substantially lowered, and the ON current thereof can beincreased.

[0127] Either of the GOLD structure and the LDD structure explainedbefore is provided in order to mitigate a high electric field near thedrain region of a TFT. Insofar as the LDD region is formed on the drainside of the TFT, the effect of the mitigation is attained sufficiently.

[0128] Further, resist masks 613, 614 are formed. As in Embodiment 1,the step of doping with an impurity element which bestows the p-typeconductivity type is carried out to form third impurity regions 615 a,615 b, 616. The third impurity region 615 a contains the impurityelement bestowing the n-conductivity type as introduced by the precedingstep (FIG. 6C).

[0129] The succeeding steps may be implemented similarly to those ofEmbodiment 1. Thus, source wiring lines 375, 376, 377 as well as drainwiring lines 378, 379, a passivation film 380, and a second interlayerinsulating film 381 made of an organic resin are formed. Then, an activematrix substrate shown in FIG. 7 is completed. More specifically, then-channel TFT of the CMOS circuit is formed with a channel formingregion 617, first impurity regions 620, 621, and second impurity regions618, 619. Here, the second impurity region 619 consists of a part (GOLDregion) 619 a underlying the corresponding gate electrode, and a part(LDD region) 619 b not underlying the gate electrode. Besides, the firstimpurity region 620 serves as the source region of the TFT, and thefirst impurity region 621 as the drain region.

[0130] The p-channel TFT of the CMOS circuit is formed with a channelforming region 622, and third impurity regions 624 a, 624 b, 623. Thethird impurity region 623 serves as the source region of the TFT, andthe third impurity regions 624 a, 624 b as the drain region. The pixelTFTs of the pixel matrix circuit are formed with channel forming regions625, 629, first impurity regions 628, 632, and second impurity regions626, 627, 630, 631. The second impurity regions can be divided intoparts 626 a, 627 a, 630 a, 631 a underlying the corresponding gateelectrodes, and parts 626 b, 627 b, 630 b, 631 b not underlying the gateelectrodes.

[0131] [Embodiment 3]

[0132] In this embodiment, there will be described another aspect ofperformance in which a pixel matrix circuit, and a CMOS circuit beingthe basic form of a drive circuit to be provided around the pixel matrixcircuit are fabricated simultaneously in the same manner as inEmbodiment 1.

[0133] First, as in Embodiment 1, the steps of FIGS. 3A through 3C arecarried out.

[0134] At the next step as illustrated in FIG. 8A, using a knownpatterning technique, resist masks 801, 802, 803, 804, 805 are formed,and the conductive layer (C) 321 and the conductive layer (A) 307 arepartly removed. Here, the step of the removal is implemented by dryetching as in Embodiment 1. Thus, the first layers 851, 852, 853, 854,855 of respective gate electrodes and the third layers 856, 857, 858,859, 860 thereof are formed. The lengths of the first layer of each gateelectrode and the third layer thereof in the channel length directionare set equal. The first layers 851, 852 of the gate electrodes of theCMOS circuit and the third layers 856, 857 thereof are formed longerthan their final shapes and at lengths of 9 μm. Besides, the firstlayers 853, 854 of the gate electrodes of the pixel matrix circuit andthe third layers 858, 859 thereof are similarly formed at lengths of 7μm.

[0135] Further, a retention capacitance is provided on the drain side ofthe pixel TFT of the pixel matrix circuit. On this occasion, theelectrodes 855, 860 of the retention capacitance are respectively formedfrom the conductive layer (A) and the conductive layer (C).

[0136] Thereafter, the step of second doping with an impurity elementbestowing the n-conductivity type is carried out as in Embodiment 1. Atthis step, phosphorus is introduced into the semiconductor layersthrough those parts of the gate insulating film with which the gateelectrodes do not lie in contact, thereby to form regions 806, 807, 808,811, 812 doped with the element phosphorus at a high concentration.After the end of this step, the resist masks 801, 802, 803, 804, 805 areremoved (FIG. 8A).

[0137] Subsequently, a photoresist film is formed again, and the step ofpatterning based on the exposure of the photoresist film to lightprojected from the rear surface of the substrate. On this occasion, asillustrated in FIG. 8B, resist masks 813, 814, 815, 816, 817 are formedin self-alignment fashion with the respective gate electrodes serving asmasks. The exposure from the rear surface is done by utilizing directlight and scattered light. The resist masks can be formed inside theperipheries of the upper surfaces of the gate electrodes as shown inFIG. 8B, by regulating the conditions of the exposure such as a lightintensity and an exposure time.

[0138] Using the resist masks 813, 814, 815, 816, 817, the non-maskedparts of the third layers and first layers of the gate electrodes areremoved by dry etching. The conditions of the dry etching are set as inEmbodiment 1. After the end of the etching, the resist masks 813, 814,815, 816, 817 are removed.

[0139] Thus, the first layers 818, 819, 820, 821 of the gate electrodes,the third layers 823, 824, 825, 826 of the gate electrodes, and thewiring line portions 822, 827 of the retention capacitance are formed asshown in FIG. 8(C). Owing to the etching, the first layers 851, 852 andthird layers 856, 857 of the gate electrodes of the CMOS circuit areformed into lengths of 6 μm. Besides, the first layers 853, 854 andthird layers 858, 859 of the gate electrodes of the pixel matrix circuitare similarly formed into lengths of 4 μm.

[0140] Further, domains where the n-channel TFTs are to be formed arecovered with resist masks 828, 829 so as to carry out the step of thirddoping with an impurity element which bestows the p-conductivity type(FIG. 8C).

[0141] The succeeding steps may be implemented similarly to those ofEmbodiment 1. Thus, an active matrix substrate shown in FIG. 5 can befabricated.

[0142] [Embodiment 4]

[0143] In this embodiment, there will be described another aspect ofperformance in which a pixel matrix circuit, and a CMOS circuit beingthe basic form of a drive circuit to be provided around the pixel matrixcircuit are fabricated simultaneously in the same manner as inEmbodiment 1.

[0144] First, as in Embodiment 1, the steps of FIGS. 3A through 3C arecarried out. Thus, gate electrodes are formed as illustrated in FIG. 9C.

[0145] At the next step, using a known patterning technique, resistmasks are formed, and the conductive layer (C) 321 and the conductivelayer (A) 307 are partly removed. Here, the step of the removal isimplemented by dry etching. The conditions of the dry etching of theconductive layer (C) 321 made of Ta are that CF₄ and O₂ are respectivelyintroduced 80 SCCM and 20 SCCM, that a pressure of 100 mTorr is held,and that a high-frequency power of 500 W is supplied. On this occasion,the etching rate of the Ta film is 60 nm/minute. Besides, the conditionsof the etching of the conductive layer (A) 307 made of Ti are thatSiCl₄, Cl₂ and BCl₃ are respectively introduced 40 SCCM, 5 SCCM and 180SCCM, that a pressure of 80 mTorr is held, and that a high-frequencypower of 1200 W is supplied. On this occasion, the etching rate of theTi film is 34 nm/minute.

[0146] Thus, the first layers 322, 323, 324, 325 of the respective gateelectrodes and the third layers 327, 328, 329, 330 thereof are formed.The first layer of each gate electrode and the third layer thereof areformed having equal lengths in the direction of the channel length. Morespecifically, the first layers 322, 323 of the corresponding gateelectrodes and the third layers 327, 328 thereof have lengths of 6 μm.Besides, the first layers 324, 325 of the corresponding gate electrodesand the third layers 329, 330 thereof have lengths of 4 μm.

[0147] Under the above etching conditions, the gate insulating film 306formed of the silicon oxide nitride film is also etched. The etchingrate of the film 306 is 18 nm/minute under the etching conditions of theTa film. Usually, the etching is carefully carried out so as not to etchthe gate insulating film. This phenomenon, however, can be positivelyutilized for thinning those parts of the gate insulating film with whichthe gate electrodes do not lie in contact. Such a contrivance can beimmediately actualized merely by increasing an etching time period atthe step of etching the gate electrodes.

[0148] However, a gas to be used must be chosen yet for etching the gateinsulating film. In this regard, a fluorine-based gas such as CF₄ or NF₃produces a result better than that of a chlorine-based gas.

[0149] Here, the gate insulating film is etched with the gaseous mixtureconsisting of CF₄ and O₂ as used for etching the Ta film. Morespecifically, the conditions of the etching are that CF₄ and O₂ arerespectively introduced 80 SCCM and 20 SCCM, that a pressure of 100mTorr is held, and that a high-frequency power of 500 W is supplied.Thus, when the gate insulating film 306 formed to a thickness of 100 nmis etched for a time period of about 2.5 minutes, those parts of thegate insulating film with which the gate electrodes do not lie incontact can be thinned to a thickness of 50 nm as shown in FIG. 9A.

[0150] As in Embodiment 1, resist masks 332, 333, 334, 335, 336 areformed so as to carry out the step of second doping with an impurityelement which bestows the n-conductivity type. On this occasion, thethickness of the gate insulating film is 50 nm in correspondence withregions 337, 338, 339, 340, 341, 342, 343 which are to be doped with theimpurity element bestowing the n-conductivity type, and hence, thesemiconductor layers can be efficiently doped with the impurity element.

[0151] Owing to the thinned gate insulating film, an accelerationvoltage in ion doping can be lowered from 80 keV to 40 keV, and damagesto the gate insulating film and the semiconductor layers can be relieved(FIG. 9B).

[0152] At the next step, as illustrated in FIG. 9C, resist masks 344,345 are formed so as to carry out the step of doping with an impurityelement which bestows the p-conductivity type. The parts of the gateinsulating film lying in contact with regions 346 a, 346 b, 347 a, 347 bwhich are to be doped with the impurity bestowing the p-conductivitytype are 50 nm thick, so that an acceleration voltage in ion doping canbe lowered from 80 keV to 40 keV, and the semiconductor layers can beefficiently doped with the impurity element.

[0153] The other steps may be conformed to Embodiment 1. Thus, sourcewiring lines 375, 376, 377 as well as drain wiring lines 378, 379, apassivation film 380, and a second interlayer insulating film 381 madeof an organic resin are formed. Then, an active matrix substrate shownin FIG. 10 is completed. More specifically, the n-channel TFT of theCMOS circuit is formed with a channel forming region 348, first impurityregions 360, 361, and second impurity regions 349, 350. Here, the secondimpurity regions are constituted by parts 349 a, 350 a underlying thegate electrode, and parts (LDD regions) 349 b, 350 b not underlying thegate electrode. Besides, the first impurity region 360 functions as thesource region of the TFT, and the first impurity region 361 as the drainregion. Likewise, the p-channel TFT of the CMOS circuit is formed withthe gate electrode of the clad structure, and it is formed with achannel forming region 362, and third impurity regions 363 a, 363 b, 364a, 364 b. The third impurity regions 363 a, 363 b serve as the sourceregion of the TFT, and the third impurity regions 364 a, 364 b as thedrain region. In addition, the pixel TFTs of the pixel matrix circuitare formed with channel forming regions 365, 369, first impurity regions368, 372, and second impurity regions 366 a, 366 b, 367 a, 367 b, 370 a,370 b, 371 a, 371 b. The second impurity regions can be divided into theparts 366 a, 367 a, 370 a, 371 a underlying the corresponding gateelectrodes, and the parts 366 b, 367 b, 370 b, 371 b not underlying thegate electrodes.

[0154] [Embodiment 5]

[0155] In this embodiment, the construction of the present inventionwill be described concerning a method in which a pixel matrix circuit,and a CMOS circuit being the basic form of a drive circuit to beprovided around the pixel matrix circuit are fabricated simultaneously.

[0156] Referring to FIGS. 11A through 11C, a substrate 1101 is anon-alkaline glass substrate which is typified by, for example, 1737Glass Substrate of Corning Incorporated. An underlying film 1102 isformed on that surface of the substrate 1101 on which TFTs are to beformed, by plasma CVD or sputtering. Though not shown, a silicon nitridefilm being 25 to 100 nm, typically 50 nm thick, and a silicon oxide filmbeing 50 to 300 nm, typically 150 nm thick, are formed as the underlyingfilm 1102. Alternatively, the underlying film 1102 may well be made ofonly a silicon nitride film or a silicon oxide nitride film.

[0157] Subsequently, an amorphous silicon film being 50 nm thick isformed on the underlying film 1102 by plasma CVD. The amorphous siliconfilm should desirably be dehydrogenated by heating for several hourspreferably at 400 to 550 degrees centigrade though the conditions of thedehydrogenation depend also upon the hydrogen content of the depositedfilm, so as to decrease the hydrogen content to 5 atomic % or below,followed by the step of crystallization. Alternatively, an amorphoussilicon film may well be formed by another producing method such assputtering or vapor deposition, but impurity elements such as oxygen andnitrogen contained in the produced film should desirably be decreasedsufficiently.

[0158] Here, both the underlying film and the amorphous silicon film areproduced by the plasma CVD, and they may well be consecutively formed invacuum on this occasion. The substrate is not once exposed to theatmospheric air after the formation of the underlying film, whereby thecontamination of the surface of the resulting substrate can be preventedto relieve the discrepancy of the characteristics of TFTsto-be-fabricated.

[0159] In this embodiment, a crystalline silicon film to be used assemiconductor layers is formed by thermal crystallization which employsa catalyst element. In the case of employing the catalyst element, it isdesirable to apply the technique disclosed in the official gazette ofJapanese Patent Application Laid-open No. 7-130652 (1995) or No. 8-78329(1996).

[0160]FIGS. 19A and 19B illustrate an example in the case where thetechnique disclosed in the official gazette of Japanese PatentApplication Laid-open No. 7-130652 (1995) is applied to the presentinvention. A silicon oxide film 1902 is formed on a substrate 1901, andis overlaid with an amorphous silicon film 1903. The surface of theamorphous silicon film 1903 is coated with a nickel acetate solutionwhich contains 10 ppm of nickel in terms of weight, thereby to form anickel containing layer 1904 (FIG. 19A).

[0161] After the step of dehydrogenation at 500 degrees centigrade forone hour, a heat treatment is carried out at 500 to 650 degreescentigrade for 4 to 12 hours, for example, at 550 degrees centigrade for8 hours. Thus, a crystalline silicon film 1905 is formed (FIG. 19B).

[0162] On the other hand, the technique disclosed in the officialgazette of Japanese Patent Application Laid-open No. 8-78329 (1996) issuch that the selective crystallization of an amorphous silicon film ispermitted by selectively introducing the catalyst element. FIGS. 20A and20B illustrate an example in the case of applying the technique to thepresent invention.

[0163] First, a silicon oxide film 2002 and an amorphous silicon film2003 are formed on a glass substrate 2001, and a silicon oxide film 2004is consecutively formed. On this occasion, the thickness of the siliconoxide film 2004 is set at 150 nm.

[0164] Secondly, the silicon oxide film 2004 is patterned so as to formopenings 2005 in selected parts. Thereafter, the surface of theresulting glass substrate is coated with a nickel acetate solution whichcontains 10 ppm of nickel in terms of weight. Thus, a nickel containinglayer 2006 is formed, and it lies in contact with the amorphous siliconfilm 2003 at only the bottoms of the openings 2005 (FIG. 20A).

[0165] Subsequently, a heat treatment is carried out at 500 to 650degrees centigrade for 4 to 24 hours, for example, at 570 degreescentigrade for 14 hours, thereby to form a crystalline silicon film2007. In the course of the crystallization, the parts of the amorphoussilicon film 2003 having been contacted by the nickel containing layer2006 is initially crystallized, and the crystallization proceedslaterally from the parts. The crystalline silicon film 2007 thus formedis an aggregate of rod or needle crystals. Since the individual crystalshave been grown with a specific directionality when macroscopicallyviewed, the film 2007 has the merit of uniform crystallinity (FIG. 20B).

[0166] By the way, the catalyst elements usable in the two techniquesinclude iron (Fe), palladium (Pd), tin (Sn), lead (Pb), cobalt (Co),platinum (Pt), copper (Cu) and gold (Au), in addition to nickel (Ni).

[0167] The crystalline silicon film is formed using the technique asexplained above, and is patterned. Then, the semiconductor layers 1103,1104, 1105 shown in FIG. 11A can be formed.

[0168] There will also been described an example in which a crystallinesilicon film is formed using a catalyst element, followed by the step ofgettering for removing the catalyst element from the crystalline siliconfilm.

[0169] This example is such a technique that the catalyst elementemployed for the crystallization of an amorphous silicon film is removedafter the crystallization by utilizing the gettering action ofphosphorus. Owing to the technique, the concentration of the catalystelement in the crystalline silicon film can be lowered to 1×10¹⁷atoms/cm³ or less, preferably 1×10¹⁶ atoms/cm³.

[0170]FIG. 21A illustrates a state where a subbing film 2102 and acrystalline silicon film 2103 are formed on a substrate. Besides, amasking silicon oxide film 2104 is formed on the surface of thecrystalline silicon film 2103 to a thickness of 150 nm, and it isprovided with openings by patterning so as to form the exposed parts ofthe crystalline silicon film 2103. Further, the step of introducing theelement phosphorus is implemented, whereby the crystalline silicon film2103 is provided with regions 2105 doped with the element phosphorus.

[0171] In this state, the substrate is heat-treated in a nitrogenatmosphere at 550 to 800 degrees centigrade for 5 to 24 hours, forexample, at 600 degrees centigrade for 12 hours. Then, the regions 2105of the crystalline silicon film 2103 doped with the element phosphorusact as gettering sites, and the catalyst element remaining in thecrystalline silicon film 2103 can be segregated into the regions 2105doped with the element phosphorus.

[0172] The masking silicon oxide film 2104 and the regions 2105 dopedwith the element phosphorus are etched and removed, thereby to obtain acrystalline silicon film in which the concentration of the catalystelement used at the step of crystallization is lowered to 1×10¹⁷atoms/cm³ or less. This crystalline silicon film is usable for thesemiconductor layers 1103, 1104, 1105 shown in FIG. 11A.

[0173] Subsequently, the insular semiconductor layers 1103, 1104 and1105 are covered with a gate insulating film 1106 whose principalcomponent is silicon oxide or silicon nitride. The gate insulating film1106 may be a silicon oxide nitride film which is formed from startingmaterials of N₂O and SiH₄ by plasma CVD to a thickness of 10 to 200 nm,preferably 50 to 150 nm. Here, the silicon oxide nitride film is formedto a thickness of 100 nm.

[0174] Thereafter, the gate insulating film 1106 is overlaid with anelectrically conductive layer (A) 1107 which forms the first layers ofgate electrodes, and an electrically conductive layer (B) 1108 whichforms the second layers of the gate electrodes. The conductive layer (A)1107 may be formed of a material selected from the elements of Ti, Ta, Wand Mo, and a compound containing any of the elements as its componentmay well be employed considering an electric resistance and a thermalresistance. In addition, the thickness of the conductive layer (A) 1107needs to be set at 10 to 100 nm, preferably 20 to 50 nm. Here, a Ti filmis formed to a thickness of 50 nm by sputtering.

[0175] The conductive layer (B) 1108 for forming the second layers ofthe gate electrodes should preferably be formed of a material selectedfrom the elements of Al and Cu. This layer (B) 1108 is provided in orderto lower the electric resistances of the gate electrodes, and is formedto a thickness of 50 to 400 nm, preferably 100 to 200 nm. In case ofemploying the element Al, it is allowed to use pure Al or to use an Alalloy in which an element selected from the elements of Ti, Si and Sc isadded 0.1 to 5 atomic %. On the other hand, in case of employing theelement Cu, a silicon nitride film being 30 to 100 nm thick shouldpreferably be provided on the surface of the gate insulating film 1106though not shown.

[0176] Here, an Al film in which the element Sc is added 0.5 atomic % isformed to a thickness of 200 nm by sputtering (FIG. 11A).

[0177] At the next step, using a known patterning technique, a resistmask is formed, and the conductive layer (B) 1108 is partly removed.Here, since the conductive layer (B) 1108 is formed of the Al film dopedwith 0.5 atomic % of Sc, the step of the removal is implemented by wetetching with a solution of phosphoric acid. Thus, the second layers1109, 1110, 1111, 1112 of the gate electrodes are formed as shown inFIG. 11B. Regarding the lengths of the second layers of the respectivegate electrodes in the directions of the channel lengths of thecorresponding TFTs, the length of each of the second layers 1109, 1110of the gate electrodes constituting the CMOS circuit is set at 3 μm, andthe length of each of the second layers 1111, 1112 of the gateelectrodes constituting the multigate structure of the pixel matrixcircuit is set at 2 μm.

[0178] Moreover, this embodiment is so constructed that a retentioncapacitance is provided on the side of the drain of the pixel TFT whichconstitutes the pixel matrix circuit. On this occasion, the capacitancewiring line 1113 of the retention capacitance is formed of the samematerial as that of the conductive layer (B).

[0179] Thereafter, the step of first doping with an impurity elementbestowing the n-conductivity type is implemented. Here, phosphorus isemployed, and ion doping with phosphine (PH₃) is used for the firstdoping. Since, at this step, the element phosphorus is passed throughthe gate insulating film 1106 and the conductive layer (A) 1107 so as todope the underlying semiconductor layers 1103, 1104, 1105 with thiselement, the acceleration voltage of the ion doping is set at a somewhathigh voltage of 80 keV. The concentration of the element phosphorus tobe introduced into the semiconductor layers as a dopant, shouldpreferably be set within a range of 1×10¹⁶ to 5×10¹⁹ atoms/cm³. Here,the concentration is set at 1×10¹⁸ atoms/cm³. Thus, regions 1114, 1115,1116, 1117, 1118, 1119, 1120, 1121 doped with the element phosphorus areformed in the semiconductor layers (FIG. 11B).

[0180] Subsequently, domains where the n-channel TFTs are to be formedare covered with resist masks 1122, 1123 so as to carry out the step ofthird doping at which only the domain where the p-channel TFT is to beformed is doped with an impurity element bestowing the p-conductivitytype. Here, boron is employed as the impurity element, and ion doping isimplemented with diborane (B₂H₆). Also in this case, the accelerationvoltage of the ion doping is set at 80 keV so as to introduce theelement boron at a concentration of 2×1020 atoms/cm³. Thus, thirdimpurity regions 1124, 1125 doped with the element boron at a highconcentration are formed as illustrated in FIG. 11C.

[0181] After removing the resist masks 1122, 1123, an electricallyconductive layer (C) 1126 to become the third layers of the respectivegate electrodes is formed in close contact with the conductive layer (A)1107, the second layers 1109, 1110, 1111, 1112 of the gate electrodesand the wiring line 1113 of the retention capacitance. The conductivelayer (C) 1126 may be formed of a material selected from the elements ofTi, Ta, W and Mo, and a compound containing any of the elements as itscomponent may well be employed considering an electric resistance and athermal resistance. In addition, the thickness of the conductive layer(C) 1126 needs to be set at 10 to 100 nm, preferably 20 to 50 nm. Here,an Mo—W film is formed to a thickness of 50 nm by sputtering (FIG. 12A).

[0182] At the next step, using a known patterning technique, resistmasks are formed, and the conductive layer (C) 1126 and the conductivelayer (A) 1107 are partly removed. Here, the step of the removal isimplemented by dry etching. The conditions of the dry etching of theconductive layer (C) 1126 made of the Mo—W film are that Cl₂ isintroduced 80 SCCM, that a pressure of 10 mTorr is held, and that ahigh-frequency power of 350 W is supplied. On this occasion, the etchingrate of the Mo—W film is 50 nm/minute. Besides, the conditions of theetching of the conductive layer (A) 1107 made of the element Ti are thatSiCl₄, Cl₂ and BCl₃ are respectively introduced 40 SCCM, 5 SCCM and 180SCCM, that a pressure of 80 mTorr is held, and that a high-frequencypower of 1200 W is supplied. On this occasion, the etching rate of theTi film is 34 nm/minute.

[0183] A slight residue is sometimes observed after the etching, but itcan be eliminated by washing the resulting substrate with a detergentSPX or a solution of EKC or the like. Under the above etchingconditions, the etching rate of the gate insulating film 1106 underlyingthe layers 1126 and 1107 is 18 to 38 nm/minute. Attention needs to bepaid to the fact that, when the etching time period of the removal stepis long, the gate insulating film 1106 is etched excessively.

[0184] Thus, the first layers 1127, 1128, 1129, 1130 of the respectivegate electrodes and the third layers 1132, 1133, 1134, 1135 thereof areformed. The first layer of each gate electrode and the third layerthereof are formed having equal lengths in the direction of the channellength. More specifically, the first layers 1127, 1128 of thecorresponding gate electrodes and the third layers 1132, 1133 thereofhave lengths of 6 μm. Besides, the first layers 1129, 1130 of thecorresponding gate electrodes and the third layers 1134, 1135 thereofhave lengths of 4 μm (FIG. 12B).

[0185] Besides, the retention capacitance is provided on the drain sideof the pixel TFT constituting the pixel matrix circuit. On thisoccasion, the electrode portions 1131, 1136 of the retention capacitanceare respectively formed from the conductive layer (A) and the conductivelayer (C).

[0186] Subsequently, as illustrated in FIG. 12C, resist masks 1137,1138, 1139, 1140, 1141 are formed so as to carry out the step of seconddoping with an impurity element bestowing the n-conductivity type. Here,the step is implemented by ion doping with phosphine (PH₃). Also at thisstep, phosphorus as a dopant is passed through the gate insulating film1106 to be introduced into the underlying semiconductor layers, andhence, the acceleration voltage of the ion doping is set at a somewhathigh voltage of 80 keV. Thus, regions 1142, 1143, 1144, 1145, 1146,1147, 1148 doped with the element phosphorus are formed. Theconcentration of the element phosphorus in these regions 1142 to 1148 ishigher than in the regions formed by the step of the first doping withthe impurity element bestowing the n-conductivity type. The phosphorusconcentration should preferably be set at 1×10²⁰ to 1×10²¹ atoms/cm³.Here, it is set at 1×10²⁰ atoms/cm³.

[0187] At this step, the lengths of the resist masks 1137, 1138, 1139,1140 in the channel length direction are important for determining thestructures of the respective TFTs. Especially in each of the n-channelTFTs, the part of the second impurity region lying under the gateelectrode and the part thereof not lying under the gate electrode can bedetermined at will within a certain range in accordance with the lengthof the first and third layers of the gate electrode and the length ofthe resist mask. In this embodiment, the length of the first layers1127, 1128 and third layers 1132, 1133 of the corresponding gateelectrode is 6 μm, and that of the first layers 1129, 1130 and thirdlayers 1134, 1135 of the corresponding gate electrodes is 4 μm.Therefore, the resist masks 1137, 1138 are set at a length of 9 μm, andthe resist masks 1139, 1140 are set at a length of 7 μm.

[0188] After the steps illustrated up to FIG. 12C have ended, the resistmasks 1137, 1138, 1139, 1140, 1141 are removed so as to carry out thestep of forming a first interlayer insulating film 1168, as shown inFIG. 13. The first interlayer insulating film 1168 is formed by adouble-layer structure. Initially, a silicon nitride film is formed to athickness of 50 nm. The silicon nitride film is formed by plasma CVDunder the conditions that SiH₄, NH₃ and N₂ are respectively introduced 5SCCM, 40 SCCM and 100 SCCM, that a pressure of 0.7 Torr is held, andthat a high-frequency power of 300 W is supplied. Subsequently, asilicon oxide film is formed to a thickness of 950 nm under theconditions that TEOS and O² are respectively introduced 500 SCCM and 50SCCM, that a pressure of 1 Torr is held, and that a high-frequency powerof 200 W is supplied. Accordingly, the silicon nitride film and thesilicon oxide film which are 1 km thick in total constitute the firstinterlayer insulating film 1168.

[0189] The step of heat treatment needs to be implemented for activatingthe impurity elements bestowing the n-conductivity type andp-conductivity type as have been introduced at the respectiveconcentrations. This step may be implemented by thermal annealing withan electric heating furnace, laser annealing with the excimer laserstated before, or rapid thermal annealing (RTA) with a halogen lamp. Thelaser annealing can activate the impurity elements at a lower substrateheating temperature, but it is difficult of activating them even in theregions concealed under the gate electrodes. Accordingly, the thermalannealing is employed here. Conditions in this case are a nitrogenatmosphere, and a heating temperature of 300 to 700 degrees centigrade,preferably 350 to 550 degrees centigrade. Here, the heat treatment iscarried out at 450 degrees centigrade for 2 hours.

[0190] The first interlayer insulating film 1168 is thereafter formed bypatterning with contact holes which reach the source regions and drainregions of the respective TFTs. Further, source wiring lines 1169, 1170,1171 and drain wiring lines 1172, 1173 are laid. In this embodiment,each of the wiring lines has a triple-layer structure, not shown, whichis formed in such a way that a Ti film being 100 nm thick, an Al filmcontaining Ti and being 300 nm thick, and a Ti film being 150 nm thickare consecutively deposited by sputtering.

[0191] In addition, a passivation film 1174 is formed covering thesource wiring lines 1169, 1170, 1171 as well as the drain wiring lines1172, 1173 and the first interlayer insulating film 1168. Thepassivation film 1174 is formed as a silicon nitride film to a thicknessof 50 nm. Further, a second interlayer insulating film 1175 made of anorganic resin is formed to a thickness of about 1000 nm. Usable as theorganic resin are polyimide, acrylic resin, polyimidoamide, etc. Themerits of the use of the organic resin film are that a method forforming the film is easy, that a parasitic capacitance can be loweredowing to the small dielectric constant of the organic resin, and thatthe flatness of the surface of the film is excellent. Incidentally, itis possible to employ organic resins other than mentioned above. Here,polyimide of the type which is thermally polymerized after applicationon the substrate is employed, and it is baked at 300 degrees centigrade.

[0192] By the steps thus far described, the gate electrodes of the cladstructure are formed, and the n-channel TFT of the CMOS circuit isformed with a channel forming region 1149, first impurity regions 1152,1153, and second impurity regions 1150 a, 1150 b, 1151 a, 1151 b. Here,each of the parts 1150 a, 1151 a (GOLD regions) of the second impurityregions underlying the gate electrode has a length of 1.5 μm, while eachof the parts 1150 b, 1151 b (LDD regions) of the second impurity regionsnot underlying the gate electrode has a length of 1.5 μm. Besides, thefirst impurity region 1152 serves as the source region of the TFT, andthe first impurity region 1153 as the drain region.

[0193] Likewise, the p-channel TFT of the CMOS circuit is formed withthe gate electrode of the clad structure, and it is formed with achannel forming region 1154, and third impurity regions 1155 a, 1155 b,1156 a, 1156 b. The third impurity regions 1155 a, 1155 b serve as thesource region of the TFT, and the third impurity regions 1156 a, 1156 bas the drain region.

[0194] In addition, the pixel TFTs of the pixel matrix circuit areformed with channel forming regions 1157, 1161, first impurity regions1160, 1164, and second impurity regions 1158, 1159, 1162, 1163. Thesecond impurity regions here consist of subregions 1158 a, 1159 a, 1162a, 1163 a underlying the corresponding gate electrodes, and subregions1158 b, 1159 b, 1162 b, 1163 b not underlying the gate electrodes.

[0195] In this way, an active matrix substrate in which the CMOS circuitand the pixel matrix circuit are formed on the substrate 1101 isfabricated as shown in FIG. 13. Besides, the retention capacitance issimultaneously formed on the drain side of the n-channel TFT of thepixel matrix circuit.

[0196] [Embodiment 6]

[0197] In this embodiment, there will be described a process in which anactive matrix type liquid crystal display device is produced from theactive matrix substrate fabricated in Embodiment 1.

[0198] In the active matrix substrate in the state illustrated in FIG.5, a light shield film 1601 and a third interlayer insulating film 1602are formed on the second interlayer insulating film 381 as shown in FIG.16A. The light shield film 1601 may be formed of an organic resin filmcontaining a pigment, or a metal film made of Ti, Cr or the like. Thethird interlayer insulating film 1602 is formed of an organic resin filmmade of polyimide or the like. Besides, the third interlayer insulatingfilm 1602 and the second interlayer insulating film 381 are formed witha contact hole reaching the drain wiring line 379, and a pixel electrode1603 is formed through the contact hole. A transparent conductive filmmay be employed for the pixel electrode 1603 in a case where the liquidcrystal display device is of transmission type, and a metal film in acase where the liquid crystal display device is of reflection type.Here, in order to manufacture the transmission type liquid crystaldisplay device, the pixel electrode 1603 is formed in such a way that anindium tin oxide (ITO) film is deposited on the third interlayerinsulating film 1602 to a thickness of 100 nm by sputtering.

[0199] The material of the transparent conductive film is etched with asolution based on hydrochloric acid. Since, however, the etching of thematerial ITO is liable to produce a residue, an indium oxide(In₂O₃)—zinc oxide (ZnO) alloy may well be employed for bettering theprocessibility of the etching. The indium oxide—zinc oxide alloy has thefeatures of endowing the film with an excellent surface smoothness, andexhibiting a thermal stability superior to that of the material ITO.Likewise, zinc oxide (ZnO) is a suitable material. Further, a material(ZnO:Ga) in which zinc oxide is doped with gallium (Ga), etc. can beemployed in order to attain a higher transmittance for visible light anda higher electric conductivity.

[0200] Subsequently, as shown in FIG. 16B, an orientation film 1604 isformed on the third interlayer insulating film 1602 and the pixelelectrode 1603. Usually, a polyimide resin is often used for theorientation film of a liquid crystal display element. A substrate 1605on a side opposite to the active matrix substrate is formed with atransparent conductive film 1606 and an orientation film 1607. Afterhaving been formed, each orientation film is subjected to. rubbing sothat liquid crystal molecules may be oriented in parallel with a certainpredetermined pretilt angle.

[0201] The active matrix substrate which has been formed with the pixelmatrix circuit and the CMOS circuit via the above steps, is fastened tothe opposite substrate 1605 through sealing members (not shown), spacers(not shown), or the likes by a known cell assemblage step. Thereafter, aliquid crystal material 1608 is poured between both the substrates, andthe resulting structure is completely sealed with a sealant (not shown).Then, the active matrix type liquid crystal display device shown in FIG.16B is finished up.

[0202] Next, the construction of the active matrix type liquid crystaldisplay device in this embodiment will be described with reference toFIG. 14 and FIGS. 15A and 15B. FIG. 14 is a perspective view of theactive matrix type liquid crystal display device in this embodiment. Theactive matrix substrate includes a pixel matrix circuit 1401, a scanning(gate) line drive circuit 1402 and a data (source) line drive circuit1403 which are formed on a glass substrate 301. The pixel TFT 1400 ofthe pixel matrix circuit 1401 is an n-channel TFT (of double-gatestructure), and the drive circuits 1402, 1403 provided around the pixelmatrix circuit 1401 are constructed on the basis of CMOS circuits. Thescanning (gate) line drive circuit 1402 and the data (source) line drivecircuit 1403 are respectively connected to the pixel matrix circuit 1401by gate wiring lines 1502 and source wiring lines 1503.

[0203]FIG. 15A is a top plan view showing the pixel matrix circuit 1401,and corresponding substantially to one pixel. The pixel matrix circuitincludes the n-channel TFT being the pixel TFT. A gate electrode 1520which is formed in continuation to the gate wiring line 1502, intersectsa semiconductor layer 1501 which underlies the gate electrode 1520through a gate insulating film, not shown. The semiconductor layer isformed with a source region, a drain region and a first impurity regionthough these regions are not shown. Besides, on the drain side of thepixel TFT, a retention capacitance 1507 is formed from the semiconductorlayer, the gate insulating film, and an electrode made of the samematerial as the gate electrode 1520. A capacitance wiring line 1521which is connected to the retention capacitance 1507, is laid inparallel with the gate wiring line 1502. Incidentally, a sectionalstructure taken along line A-A′ indicated in FIG. 15A is as shown by thesectional view of the pixel matrix circuit in FIG. 5.

[0204] On the other hand, in the CMOS circuit shown in FIG. 15B, gateelectrodes 1513, 1514 extended from a gate wiring line 1515 intersectrespective semiconductor layers 1510, 1512 which underlie thecorresponding gate electrodes 1513, 1514 through the gate insulatingfilm, not shown. Although no illustration is made, the semiconductorlayer of the n-channel TFT of the CMOS circuit is similarly formed witha source region, a drain region and first impurity regions. Also, thesemiconductor layer of the p-channel TFT of the CMOS circuit is formedwith a source region and a drain region. Regarding the positionalrelationships among these regions, a sectional structure taken alongline B-B′ indicated in FIG. 15B is as shown by the sectional view of theCMOS circuit in FIG. 5.

[0205] In this embodiment, the pixel TFT 1400 is of the double-gatestructure, but it may well be a single-gate structure or a multigatestructure such as triple-gate structure. The structure of the activematrix substrate in the present invention is not restricted to thestructure in this embodiment. The present invention features thestructure of the gate electrode, and the configuration of the sourceregion, drain region and other impurity regions of the semiconductorlayer which is provided under the gate electrode through the gateinsulating film. Therefore, a person who designs the active matrixsubstrate may properly determine any other constructional point.

[0206] An active matrix substrate for manufacturing the active matrixtype liquid crystal display device explained in this embodiment is notrestricted to one explained in Embodiment 1, but it may well be any ofthe active matrix substrates in Embodiments 2 to 5 and an active matrixsubstrate fabricated in accordance with a process to be explained inEmbodiment 7 below.

[0207] [Embodiment 7]

[0208] In this embodiment, there will be described a process in whichthe step of gettering is omitted from the method of fabricating theactive matrix substrate explained in Embodiment 5. In Embodiment 5, thesemiconductor layers 1103, 1104, 1105 shown in FIG. 11A are thecrystalline silicon films produced by the catalyst element. On thisoccasion, the catalyst element used at the step of crystallizationremains in the semiconductor layers, and hence, the step of getteringshould desirably be implemented. Embodiment 5 employs the process inwhich, after the crystalline silicon films have been produced, they arepartly doped with phosphorus so as to getter the remaining catalystelement. Here in Embodiment 7, the catalyst element is removed from thechannel forming regions of the TFTs by the process below, withoutimplementing the gettering step.

[0209] Here, the steps illustrated in FIGS. 11A through 12C are carriedout as they are. Thereafter, the resist masks 1137, 1138, 1139, 1140,1141 are removed.

[0210] In this case, the first impurity regions 1152, 1153, 1160, 1164of the n-channel TFTs are doped with the element phosphorus. Besides,the third impurity regions 1155 b, 1156 b of the p-channel TFT aresimilarly doped with the element phosphorus. According to Embodiment 5,the concentration of the element phosphorus is 1×10²⁰ to 1×10²¹atoms/cm³ on this occasion.

[0211] In this state, the gate insulating film and the gate electrodesare covered with a silicon nitride film 1180 as illustrated in FIG. 22.The silicon nitride film 1180 is formed to a thickness of 10 to 100 nm,here 50 nm, by plasma CVD. This silicon nitride film 1180 may well besubstituted by a silicon oxide nitride film.

[0212] In Embodiment 5, the third layers of the respective gateelectrodes are made of Mo—W. Alternatively, they may well be made of Ti,Ta, Mo, W or the like. These materials are oxidized comparatively easilyby a heat treatment which is executed under the atmospheric pressure orwhile nitrogen is being purged. In such a situation, the oxidation canbe prevented by covering the surfaces of the third layers with thesilicon nitride film 1180.

[0213] In this state, the resulting substrate is subjected to the stepof heat treatment in a nitrogen atmosphere at 400 to 800 degreescentigrade for 1 to 24 hours, for example, at 600 degrees centigrade for12 hours. Owing to this step, the introduced impurity elements bestowingthe n-conductivity type and the p-conductivity type can be activated.Further, the regions doped with the element phosphorus act as getteringsites, and the catalyst element having remained after the step of thecrystallization can be segregated. As a result, the catalyst element canbe removed from the channel forming regions. Consequently, the effect ofdecreasing OFF currents can be brought forth in the TFTs finished up.

[0214] After the end of the step shown in FIG. 22, the succeeding stepsconform to those of Embodiment 5 so as to form the first interlayerinsulating film, the source wiring lines as well as the drain wiringlines, the passivation film, and the second interlayer insulating filmas shown in FIG. 13. Then, the active matrix substrate can befabricated.

[0215] [Embodiment 8]

[0216] In this embodiment, another example of the circuit arrangement ofthe CMOS circuit shown in FIG. 1 will be described with reference toFIGS. 23A, 23B and 23C. Incidentally, terminal portions a, b, c, d in acircuit diagram of an inverter circuit in FIG. 23A and ones in a topplan view of the inverter circuit in FIG. 23B correspond to each other,respectively.

[0217] The inverter circuit shown in FIG. 23A is constructed asillustrated by the top plan view in FIG. 23B. Further, the structure ofan A-A′ section indicated in FIG. 23B is constructed of gate electrodes2409, 2409′, the source wiring line 2411 of the n-channel TFT of theCMOS circuit, the source wiring line 2414 of the p-channel TFT thereof,and the common drain wiring line 2413 of the TFTs thereof, as seen fromFIG. 23C. Here, the gate electrodes 2409, 2409′ are depicted in a statewhere the first layers 2408, 2408′ of the respective gate electrodes,the second layers 2409, 2409′ thereof and the third layers 2410, 2410′thereof are united.

[0218] The n-channel TFT of the inverter circuit includes secondimpurity regions 2402 a, 2402 b. More specifically, the second impurityregions consist of the part 2402 a which the gate electrode 2409overlaps, and the part (LDD region) 2402 b which the gate electrode 2409does not overlap. Such a structure may be provided on only the drainside of the n-channel TFT. The p-channel TFT does not include suchimpurity regions.

[0219] [Embodiment 9]

[0220] Nematic liquid crystals and various other liquid crystals can beemployed for the liquid crystal display devices of the present inventionas described above. By way of example, it is possible to employ liquidcrystals disclosed in H. Furue et al., Characteristics and DrivingScheme of Polymer-stabilized Monostable FLCD Exhibiting Fast ResponseTime and High Contrast Ratio with Gray-Scale Capability, SID, 1998; T.Yoshida et al., A Full-Color Thresholdless Antiferroelectric LCDExhibiting Wide Viewing Angle with Fast Response Time, 841, SID DIGEST,1997; S. Inui et al., Thresholdless antiferroelectricity in liquidcrystals and its application to displays, 671-673, J. Mater. Chem. 6(4),1996; and U.S. Pat. No. 5,594,569.

[0221]FIG. 24 illustrates the electrooptic characteristics of amonostable FLC (ferroelectric liquid crystal) obtained by employing anFLC which exhibits an isotropic phase-cholesteric phase-chiral smectic Cphase transition series, inducing a cholesteric phase-chiral smectic Cphase transition while a DC voltage is kept applied to the employed FLC,and bringing a cone edge into substantial agreement with a rubbingdirection. A display mode based on the ferroelectric liquid crystal asshown in FIG. 24 is called the Half-V shape switching mode. The axis ofordinates of the graph shown in FIG. 24 represents a transmittance (inan arbitrary unit), while the axis of abscissas represents an appliedvoltage. The Half-V shape switching mode is detailed in Half-V shapeswitching mode FLCD by Terada et al., Collection of Preliminary LectureManuscripts for 46th Associated Lecture Meeting on Applied Physics,March 1999, p. 1316; and Time-Division Full-Color LCD employingFerroelectric Liquid Crystal by Yoshihara et al., Liquid Crystals, Vol.3, No. 3, p. 190.

[0222] It is understood from FIG. 24 that a low voltage drive and agradation display are realized with such a mixed ferroelectric liquidcrystal. The ferroelectric liquid crystal exhibiting the aboveelectrooptic characteristics is also applicable to the liquid crystaldisplay devices according to the present invention.

[0223] Meanwhile, a liquid crystal exhibiting an antiferroelectric phasein a certain temperature range is termed an antiferroelectric liquidcrystal (AFLC). A mixed liquid crystal having the AFLC includes what iscalled a thresholdless mixed antiferroelectric liquid crystal exhibitingelectrooptic response characteristics in which a transmittance changescontinuously versus an electric field. The thresholdless mixedantiferroelectric liquid crystal includes one which exhibits so-calledV-shaped electrooptic response characteristics, and one whose drivevoltage is about ±2.5 V (about 1 to 2 μm in terms of a cell thickness)has been found out.

[0224] In general, the thresholdless mixed antiferroelectric liquidcrystal exhibits a spontaneous polarization of large magnitude, and ithas a large dielectric constant in itself. Therefore, in a case wherethe liquid crystal display device is constructed using the thresholdlessmixed antiferroelectric liquid crystal, the pixel thereof requires aretention capacitance of comparatively large value. The thresholdlessmixed antiferroelectric liquid crystal to be used should preferably havea small spontaneous polarization.

[0225] Incidentally, since a low voltage drive is realized by employingsuch a thresholdless mixed antiferroelectric liquid crystal for theliquid crystal display device according to the present invention, thepower dissipation of the display device can be lowered.

[0226] [Embodiment 10]

[0227] The active matrix substrate and the liquid crystal display devicewhich have been obtained by performing the present invention, can beemployed for various electrooptic devices. In addition, the presentinvention can be applied to any electronic equipment in which such anelectrooptic device is incorporated as a display medium. Mentioned asthe electronic equipments are a personal computer, a digital camera, avideo camera, a mobile computer, a portable telephone set and anelectronic book, a navigation system, etc. Examples of the electronicequipments are illustrated in FIGS. 25A through 25H and FIGS. 26Athrough 26D.

[0228]FIG. 25A shows a portable telephone set, which is configured of abody 9001, a voice output unit 9002, a voice input unit 9003, a displayunit 9004, operating switches 9005, and an antenna 9006. The presentinvention is applicable to the display unit 9004 and the other signalcontrol circuits incorporated into the portable telephone set.

[0229]FIG. 25B shows a video camera, which is configured of a body 9101,a display unit 9102, a sound input unit 9103, operating switches 9104, abattery 9105, and an image receiving unit 9106. The present invention isapplicable to the display unit 9102 and the other signal controlcircuits incorporated into the video camera.

[0230]FIG. 25C shows a portable information terminal, which isconfigured of a body 9201, a camera portion 9202, an image receivingportion 9203, an operating switch 9204, and a display unit 9205. Thepresent invention is applicable to the display unit 9205 and the othersignal control circuits incorporated into the portable informationterminal.

[0231]FIG. 25D shows a goggle type display device, which is configuredof a body 9301, a display unit 9302, and an arm portion 9303. Thepresent invention is applicable to the display unit 9302 and the othersignal control circuits incorporated into the goggle type displaydevice.

[0232]FIG. 25E shows a player which is used for a recording medium 9404storing programs therein, and which is configured of a body 9401, adisplay unit 9402, a loudspeaker unit 9403, and operating switches 9405.By the way, the recording medium 9404 is a DVD (Digital Versatile Disc),a CD (Compact Disc), or the like, and the player is capable ofreproducing a music program, displaying an image, displaying theinformation of a video game (or television game) or information obtainedthrough the Internet, and so forth. The present invention is applicableto the display unit 9402 and the other signal control circuitsincorporated into the player.

[0233]FIG. 25F shows a portable book (electronic book), which isconfigured of the body 9501, display units 9503, a storage medium 9504,operating switches 9505, and an antenna 9506. The present invention isapplicable to the display units 9503 and the other signal controlcircuits incorporated into the portable book.

[0234]FIG. 25G shows a personal computer, which is configured of a body9601 including a microprocessor, a memory etc., an image input unit9602, a display unit 9603, and a keyboard 9604. The present invention isapplicable to the display unit 9603 and the other signal processingcircuits incorporated into the personal computer.

[0235]FIG. 25H shows a digital camera, which is configured of the body9701, a display unit 9702, a view window 9703, operating switches 9704,and an image receiving portion (not shown). The present invention isapplicable to the display unit 9702 and the other signal controlcircuits incorporated into the digital camera.

[0236]FIG. 26A shows a front type projector, which is configured of alight-source optical system and display unit 2601, and a screen 2602.The present invention is applicable to the display unit and signalcontrol circuits. On the other hand, FIG. 26B shows a rear typeprojector, which is configured of the body 2701, a light-source opticalsystem and display unit 2702, a mirror 2703, and a screen 2704. Thepresent invention is applicable to the display unit and the other signalcontrol circuits incorporated into the front type projector and the reartype projector.

[0237]FIG. 26C illustrates an example of the structure of each of thelight-source optical system and display units 2601, 2702 respectivelyshown in FIGS. 26A and 26B. Each of the light-source optical system anddisplay units 2601, 2702 is configured of a light-source optical system2801, reflector mirrors 2802, 2804, 2805 and 2806, dichroic mirrors2803, a beam splitter 2807, liquid crystal display units 2808, a phasedifference plate 2809, and a projection optical system 2810. Theprojection optical system 2810 is constituted by a plurality of opticallenses. The example shown in FIG. 26C includes a triple panel scheme inwhich the three liquid crystal display units 2808 are used. However, thestructure is not restricted to such a scheme, but it may well beconstructed of an optical system of single panel scheme. Moreover, anoptical lens, a film having a polarizing function, a film for regulatinga phase, an IR film, etc. may well be occasionally inserted into opticalpaths which are indicated by arrows in FIG. 26C. Besides, FIG. 26D is adiagram showing an example of the structure of the light-source opticalsystem 2801 depicted in FIG. 26C. In this embodiment, the light-sourceoptical system 2801 is constituted by a reflector 2811, a light source2812, lens arrays 2813, 2814, a polarizing transducer 2815, and acondensing lens 2816. It is to be understood that the light-sourceoptical system 2801 shown in FIG. 26D is merely one example, and thatthe optical system is not restricted to the illustrated structure.

[0238] The present invention is also applicable to the reading circuitsof a navigation system an image sensor, etc. though they are not shownin the drawings. In this manner, the present invention has very wideapplications and is applicable to electronic equipments in all technicalfields. Besides, the electronic equipments in this embodiment can beincarnated using constructions which are any combinations of the aspectof performance described before and Embodiments 1 through 9.

[0239] [Embodiment 11]

[0240] This embodiment demonstrates a process for producing an EL(electroluminescence) display device according to the invention of thepresent application.

[0241]FIG. 27A is a top view showing an EL display device, which wasproduced according to the invention of the present application. In FIG.27A, there are shown a substrate 4010, a pixel part 4011, a drivingcircuit from the source 4012, and a driving circuit from the gate 4013,each driving circuit connecting to wirings 4014, 4015 and 4016 whichreach FPC 4017 leading to external equipment.

[0242]FIG. 27B is a sectional view showing the structure of the ELdisplay device in this embodiment. The pixel part, preferably togetherwith the driving circuit, is enclosed by a covering material 6000, asealing material (or housing material) 7000, and an end-sealing material(or second sealing material) 7001.

[0243] Furthermore, there is shown a substrate 4010, an underlyingcoating 4021, a TFT 4022 for the driving circuit, and a TFT 4023 for thepixel unit. (The TFT 4022 shown is a CMOS circuit consisting of ann-channel type TFT and a p-channel type TFT. The TFT 4023 shown is theone, which controls current to the EL element.) These TFTs may be of anyknown structure (top gate structure or bottom gate structure).

[0244] Incidentally, the present invention is used in the TFT 4022 forthe driving circuit and the TFT 4023 for the pixel unit.

[0245] Upon completion of TFT 4022 (for the driving circuit) and TFT4023 (for the pixel unit), with their active layer being thesemiconductor layer formed according to the invention of the presentapplication, a pixel electrode 4027 is formed on the interlayerinsulating film (planarizing film) 4026 made of a resin. This pixelelectrode is a transparent conductive film, which is electricallyconnected to the drain of TFT 4023 for the pixel unit. It is preferablethat the TFT for the pixel portion is a p-channel type TFT in the casethat the transparent conductive film is used for the pixel electrode4027. The transparent conductive film may be formed from a compound(called ITO) of indium oxide and tin oxide or a compound of indium oxideand zinc oxide. On the pixel electrode 4027 is formed an insulating film4028, in which is formed an opening above the pixel electrode 4027.

[0246] Subsequently, the EL layer 4029 is formed. It may be ofsingle-layer structure or multi-layer structure by freely combiningknown EL materials such as injection layer, hole transport layer, lightemitting layer, electron transport layer, and electron injection layer.Any known technology may be available for such structure. The ELmaterial is either a low-molecular material or a high-molecular material(polymer). The former may be applied by vapor deposition, and the lattermay be applied by a simple method such as spin coating, printing, orink-jet method.

[0247] In this example, the EL layer is formed by vapor depositionthrough a shadow mask. The resulting EL layer permits each pixel to emitlight differing in wavelength (red, green, and blue). This realizes thecolor display. Alternative systems available include the combination ofcolor conversion layer (CCM) and color filter and the combination ofwhite light emitting layer and color filter. Needless to say, the ELdisplay device may be monochromatic.

[0248] On the EL layer is formed a cathode 4030. Prior to this step, itis desirable to clear moisture and oxygen as much as possible from theinterface between the EL layer 4029 and the cathode 4030. This objectmay be achieved by forming the EL layer 4029 and the cathode 4030consecutively in a vacuum, or by forming the EL layer 4029 in an inertatmosphere and then forming the cathode 4030 in the same atmospherewithout admitting air into it. In this Example, the desired film wasformed by using a film-forming apparatus of multi-chamber system(cluster tool system).

[0249] The multi-layer structure composed of lithium fluoride film andaluminum film is used In this Example as the cathode 4030. To beconcrete, the EL layer 4029 is coated by vapor deposition with a lithiumfluoride film (1 nm thick) and an aluminum film (300 nm thick)sequentially. Needless to say, the cathode 4030 may be formed from MgAgelectrode which is a known cathode material. Subsequently, the cathode4030 is connected to a wiring 4016 in the region indicated by 4031. Thewiring 4016 to supply a prescribed voltage to the cathode 4030 isconnected to the FPC 4017 through an electrically conductive pastematerial 4032.

[0250] The electrical connection between the cathode 4030 and the wiring4016 in the region 4031 needs contact holes in the interlayer insulatingfilm 4026 and the insulating film 4028. These contact holes may beformed when the interlayer insulating film 4026 undergoes etching toform the contact hole for the pixel electrode or when the insulatingfilm 4028 undergoes etching to form the opening before the EL layer isformed. When the insulating film 4028 undergoes etching, the interlayerinsulating film 4026 may be etched simultaneously. Contact holes of goodshape may be formed if the interlayer insulating film 4026 and theinsulating film 4028 are made of the same material.

[0251] Then, a passivation film 6003, a filling material 6004 and acovering material 6000 are formed so that these layers cover the ELelement.

[0252] Furthermore, the sealing material 7000 is formed inside of thecovering material 6000 and the substrate 4010 such as surrounding the ELelement, and the end-sealing material 7001 is formed outside of thesealing material 7000.

[0253] The filling material 6004 is formed to cover the EL element andalso functions as an adhesive to adhere to the covering material 6000.As the filling material 6004, PVC (polyvinyl chloride), an epoxy resin,a silicon resin, PVB (polyvinyl butyral), or EVA (ethylenvinyl acetate)can be utilized. It is preferable to form a desiccant in the fillingmaterial 6004, since a moisture absorption can be maintained.

[0254] Also, spacers can be contained in the filling material 6004. Itis preferable to use spherical spacers comprising barium oxide tomaintain the moisture absorption in the spacers.

[0255] In the case of that the spacers are contained in the fillingmaterial, the passivation film 6003 can relieve the pressure of thespacers. Of course, the other film different from the passivation film,such as an organic resin, can be used for relieving the pressure of thespacers. As the covering material 6000, a glass plate, an aluminumplate, a stainless plate, a FRP (Fiberglass-Reinforced Plastics) plate,a PVF (Polyvinyl Fluoride) film, a Mylar film, a polyester film or anacryl film can be used. In a case that PVB or EVA is employed as thefilling material 6004, it is preferable to use an aluminum foil with athickness of some tens of m sandwiched by a PVF film or a Mylar film.

[0256] It is noted that the covering material 6000 should have a lighttransparency with accordance to a light emitting direction (a lightradiation direction) from the EL element.

[0257] The wiring 4016 is electrically connected to FPC 4017 through thegap between the sealing material 7000 and the end-sealing material 7001,and the substrate 4010. As in the wiring 4016 explained above, otherwirings 4014 and 4015 are also electrically connected to FPC 4017 underthe sealing material 4018.

[0258] [Embodiment 12]

[0259] In this embodiment, another EL display device having a differentstructure from the embodiment 11 is explained, as shown in FIGS. 28A and28B. The same reference numerals in FIGS. 28A and 28B as in FIGS. 27Aand 27B indicate same constitutive elements, so an explanation isomitted.

[0260]FIG. 28A shows a top view of the EL module in this embodiment andFIG. 28B shows a sectional view of A-A′ of FIG. 28A.

[0261] According to Embodiment 11, the passivation film 6003 is formedto cover a surface of the EL element.

[0262] The filling material 6004 is formed to cover the EL element andalso functions as an adhesive to adhere to the covering material 6000.As the filling material 6004, PVC (Polyvinyl Chloride), an epoxy resin,a silicon resin, PVB (Polyvinyl Butyral), or EVA (Ethylenvinyl Acetate)can be utilized. It is preferable to form a desiccant in the fillingmaterial 6004, since a moisture absorption can be maintained.

[0263] Also, spacers can be contained in the filling material 6004. Itis preferable to use spherical spacers comprising barium oxide tomaintain the moisture absorption in the spacers.

[0264] In the case of that the spaces are contained in the fillingmaterial, the passivation film 6003 can relieve the pressure of thespacers. Of course, the other film different from the passivation film,such as an organic resin, can be used for relieving the pressure of thespacers. As the covering material 6000, a glass plate, an aluminumplate, a stainless plate, a FRP (Fiberglass-Reinforced Plastics) plate,a PVF (polyvinyl fluoride) film, a Mylar film, a polyester film or anacryl film can be used. In a case that PVB or EVA is employed as thefilling material 6004, it is preferable to use an aluminum foil with athickness of some tens of m sandwiched by a PVF film or a Mylar film.

[0265] It is noted that the covering material 6000 should have a lighttransparency with accordance to a light emitting direction (a lightradiation direction) from the EL element.

[0266] Next, the covering material 6000 is adhered using the fillingmaterial 6004. Then, the flame material 6001 is attached to cover sideportions (exposed faces) of the filling material 6004. The flamematerial 6001 is adhered by the sealing material (acts as an adhesive)6002. As the sealing material 6002, a light curable resin is preferable.Also, a thermal curable resin can be employed if a heat resistance ofthe EL layer is admitted. It is preferable for the sealing material 6002not to pass moisture and oxygen. In addition, it is possible to add adesiccant inside the sealing material 6002.

[0267] The wiring 4016 is electrically connected to FPC 4017 through thegap between the sealing material 6002 and the substrate 4010. As in thewiring 4016 explained above, other wirings 4014 and 4015 are alsoelectrically connected to FPC 4017 under the sealing material 6002.

[0268] [Embodiment 13]

[0269] In this embodiment, the structure of the pixel region in the ELdisplay device is illustrated in more detail. FIG. 29 shows the crosssection of the pixel region, FIG. 30A shows the top view thereof andFIG. 30B shows the circuit diagram for the pixel region. In FIG. 29,FIG. 30A and FIG. 30B, the same reference numerals are referred to forthe same parts, as being common thereto.

[0270] In FIG. 29, the switching TFT 3002 formed on the substrate 3001is NTFT of the invention (cf. Embodiments 1 to 8). In this Embodiment,it has a double-gate structure, but its structure and fabricationprocess do not so much differ from the structures and the fabricationprocesses illustrated hereinabove, and their description is omittedherein. However, the double-gate structure of the switching TFT 3002 hassubstantially two TFTs as connected in series, and therefore has theadvantage of reducing the off-current to pass therethrough. In thisEmbodiment, the switching TFT 3002 has such a double-gate structure, butis not limitative. It may have a single-gate structure or a triple-gatestructure, or even any other multi-gate structure having more than threegates. As the case may be, the switching TFT 3002 may be PTFT of theinvention.

[0271] The current-control TFT 3003 is NTFT of the invention. The drainwire 3035 in the switching TFT 3002 is electrically connected with thegate electrode 3037 in the current-control TFT, via the wire 3036therebetween. The wire indicated by 3038 is a gate wire for electricallyconnecting the gate electrodes 3039 a and 3039 b in the switching TFT3002.

[0272] It is very important that the current-control TFT 3003 has thestructure defined in the invention. The current-control TFT is a unitfor controlling the quantity of current that passes through the ELelement. Therefore, a large quantity of current passes through it, andthe unit, current-control TFT has a high risk of thermal degradation anddegradation with hot carriers. To this unit, therefore, the structure ofthe invention is extremely favorable, in which an GOLD region (a secondimpurity region) is so constructed that the gate electrode overlaps withthe drain area in the current-control TFT, via a gate-insulating filmtherebetween.

[0273] In this embodiment, the current-control TFT 3003 is illustratedto have a single-gate structure, but it may have a multi-gate structurewith plural TFTs connected in series. In addition, plural TFTs may beconnected in parallel so that the channel-forming region issubstantially divided into plural sections. In the structure of thattype, heat radiation can be effected efficiently. The structure isadvantageous for protecting the device with it from thermaldeterioration.

[0274] As in FIG. 30A, the wire to be the gate electrode 3037 in thecurrent-control TFT 3003 overlaps with the drain wire 3040 therein inthe region indicated by 3004, via an insulating film therebetween. Inthis state, the region indicated by 3004 forms a capacitor. Thecapacitor 3004 functions to retain the voltage applied to the gate inthe current-control TFT 3003. The drain wire 3040 is connected with thecurrent supply line (power line) 3006, from which a constant voltage isall the time applied to the drain wire 3040.

[0275] On the switching TFT 3002 and the current-control TFT 3003,formed is a first passivation film 3041. On the film 3041, formed is aplanarizing film 3042 of an insulating resin. It is extremely importantthat the difference in level of the layered parts in TFT is removedthrough planarization with the planarizing film 3042. This is becausethe EL layer to be formed on the previously formed layers in the laterstep is extremely thin, and if there exist a difference in level of thepreviously formed layers, the EL device will be often troubled by lightemission failure. Accordingly, it is desirable to previously planarizeas much as possible the previously formed layers before the formation ofthe pixel electrode thereon so that the EL layer could be formed on theplanarized surface.

[0276] The reference numeral 3043 indicates a pixel electrode (a cathodein the EL device) of an electroconductive film with high reflectivity.The pixel electrode 3043 is electrically connected with the drain in thecurrent-control TFT 3003. It is preferable to use a n-channel type TFTfor the current-control TFT in the case of the conductive film with highreflectivity is used for the pixel electrode 3043. Moreover, it ispreferable that the pixel electrode 3043 is of a low-resistanceelectroconductive film of an aluminum alloy, a copper alloy or a silveralloy, or of a laminate of those films. Needless-to-say, the pixelelectrode 3043 may have a laminate structure with any otherelectroconductive films.

[0277] In the recess (this corresponds to the pixel) formed between thebanks 3044 a and 3044 b of an insulating film (preferably of a resin),the light-emitting layer 3045 is formed. In the illustrated structure,only one pixel is shown, but plural light-emitting layers could beseparately formed in different pixels, corresponding to different colorsof R (red), G (green) and B (blue). The organic EL material for thelight-emitting layer may be any -conjugated polymer material. Typicalpolymer materials usable herein include Polyparaphenylenevinylene (PPV)materials, Polyvinylcarbazole (PVK) materials, Polyfluorene materials,etc.

[0278] Various types of PPV-type organic EL materials are known, such asthose disclosed in “H. Shenk, H. Becker, O. Gelsen, E. Klunge, W.Kreuder, and H. Spreitzer; Polymers for Light Emitting Diodes, EuroDisplay Proceedings, 1999, pp. 33-37” and in Japanese Patent Laid-OpenNo. 10-92576(1998). Any of such known materials are usable herein.

[0279] Concretely, cyanopolyphenylenevinylenes may be used forred-emitting layers; polyphenylenevinylenes may be for green-emittinglayers; and polyphenylenevinylenes or polyalkylphenylenes may be forblue-emitting layers. The thickness of the film for the light-emittinglayers may fall between 30 and 150 nm (preferably between 40 and 100nm).

[0280] These compounds mentioned above are referred to merely forexamples of organic EL materials employable herein and are notlimitative at all. The light-emitting layer may be combined with acharge transportation layer or a charge injection layer in any desiredmanner to form the intended EL layer (this is for light emission and forcarrier transfer for light emission).

[0281] Specifically, this Embodiment is to demonstrate the embodiment ofusing polymer materials to form light-emitting layers, which, however,is not limitative. Apart from this, low-molecular organic EL materialsmay also be used for light-emitting layers. For charge transportationlayers and charge injection layers, further employable are inorganicmaterials such as silicon carbide, etc. Various organic EL materials andinorganic materials for those layers are known, any of which are usableherein.

[0282] In this Embodiment, a hole injection layer 3046 of PEDOT(polythiophene) or PAni (polyaniline) is formed on the light-emittinglayer 3045 to give a laminate structure for the EL layer. On the holeinjection layer 3046, formed is an anode 3047 of a transparentelectroconductive film. In this Embodiment, the light having beenemitted by the light-emitting layer 3045 radiates therefrom in thedirection toward the top surface (that is, in the upward direction ofTFT). Therefore, in this, the anode must transmit light. For thetransparent electroconductive film for the anode, usable are compoundsof indium oxide and tin oxide, and compounds of indium oxide and zincoxide. However, since the anode is formed after the light-emitting layerand the hole injection layer having poor heat resistance have beenformed, it is preferable that the transparent electroconductive film forthe anode is of a material capable of being formed into a film at as lowas possible temperatures.

[0283] When the anode 3047 is formed, the EL device 3005 is finished.The EL device 3005 thus fabricated herein indicates a capacitorcomprising the pixel electrode (cathode) 3043, the light-emitting layer3045, the hole injection layer 3046 and the anode 3047. As in FIG. 30A,the region of the pixel electrode 3043 is nearly the same as the area ofthe pixel. Therefore, in this, the entire pixel functions as the ELdevice. Accordingly, the light utility efficiency of the EL devicefabricated herein is high, and the device can display bright images.

[0284] In this Embodiment, a second passivation film 3048 is formed onthe anode 3047. For the second passivation film 3048, preferably used isa silicon nitride film or a silicon oxynitride film. The object of thefilm 3048 is to insulate the EL device from the outward environment. Thefilm 3048 has the function of preventing the organic EL material frombeing degraded through oxidation and has the function of preventing itfrom degassing. With the second passivation film 3048 of that type, thereliability of the EL display device is improved.

[0285] As described hereinabove, the EL display panel of the inventionfabricated in this Embodiment has a pixel region for the pixel havingthe constitution as in FIG. 29, and has the switching TFT through whichthe off-current to pass is very small to a satisfactory degree, and thecurrent-control TFT resistant to hot carrier injection. Accordingly, theEL display panel fabricated herein has high reliability and can displaygood images.

[0286] The constitution of this Embodiment can be combined with anyconstitution of Embodiments 1 to 8 in any desired manner. Incorporatingthe EL display device of this Embodiment into the electronic applianceof Embodiment 10 as its display part is advantageous.

[0287] [Embodiment 14]

[0288] This Embodiment is to demonstrate a modification of the ELdisplay panel of Embodiment 13, in which the EL device 3005 in the pixelregion has a reversed structure. For this Embodiment, referred to isFIG. 31. The constitution of the EL display panel of this Embodimentdiffers from that illustrated in FIG. 29 only in the EL device part andthe current-control TFT part. Therefore, the description of the otherparts except those different parts is omitted herein.

[0289] In FIG. 31, the current-control TFT 3103 may be PTFT of theinvention. For the process of forming it, referred to is that ofEmbodiment 1 to 8.

[0290] In this Embodiment, the pixel electrode (anode) 3050 is of atransparent electroconductive film. Concretely, used is anelectroconductive film of a compound of indium oxide and zinc oxide.Needless-to-say, also usable is an electroconductive film of a compoundof indium oxide and tin oxide.

[0291] After the banks 3051 a and 3051 b of an insulating film have beenformed, a light-emitting layer 3052 of polyvinylcarbazole is formedbetween them in a solution coating method. On the light-emitting layer3052, formed are an electron injection layer 3053 ofacetylacetonatopotassium (hereinafter acacK), and a cathode 3054 of analuminum alloy. In this case, the cathode 3054 serves also as apassivation film. Thus is fabricated the EL device 3101.

[0292] In this Embodiment, the light having been emitted by thelight-emitting layer 3052 radiates in the direction toward the substratewith TFT formed thereon, as in the direction of the arrow illustrated.

[0293] The constitution of this Embodiment can be combined with anyconstitution of Embodiments 1 to 8 in any desired manner. Incorporatingthe EL display panel of this Embodiment into the electronic appliance ofEmbodiment 10 as its display part is advantageous.

[0294] [Embodiment 15]

[0295] This Embodiment is to demonstrate modifications of the pixel withthe circuit pattern of FIG. 30B. The modifications are as in FIG. 32A toFIG. 32C. In this Embodiment illustrated in those FIG. 32A to FIG. 32C,3201 indicates the source wire for the switching TFT 3202; 3203indicates the gate wire for the switching TFT 3202; 3204 indicates acurrent-control TFT; 3205 indicates a capacitor; 3206 and 3208 indicatecurrent supply lines; and 3207 indicates an EL element.

[0296] In the embodiment of FIG. 32A, the current supply line 3806 iscommon to the two pixels. Specifically, this embodiment is characterizedin that two pixels are lineal-symmetrically formed with the currentsupply line 3206 being the center between them. Since the number ofcurrent supply lines can be reduced therein, this embodiment isadvantageous in that the pixel pattern can be much finer and thinner.

[0297] In the embodiment of FIG. 32B, the current supply line 3208 isformed in parallel to the gate wire 3203. Specifically, in this, thecurrent supply line 3208 is so constructed that it does not overlap withthe gate wire 3203, but is not limitative. Being different from theillustrated case, the two may overlap with each other via an insulatingfilm therebetween so far as they are of different layers. Since thecurrent supply line 3208 and the gate wire 3203 may enjoy the commonexclusive area therein, this embodiment is advantageous in that thepixel pattern can be much finer and thinner.

[0298] The structure of the embodiment of FIG. 32C is characterized inthat the current supply line 3208 is formed in parallel to the gatewires 3203 a and 3203 b, like in FIG. 32B, and that two pixels arelineal-symmetrically formed with the current supply line 3208 being thecenter between them. In this, it is also effective to provide thecurrent supply line 3208 in such a manner that it overlaps with any oneof the gate wires 3203 a and 3203 b. Since the number of current supplylines can be reduced therein, this embodiment is advantageous in thatthe pixel pattern can be much finer and thinner.

[0299] The constitution of this Embodiment can be combined with anyconstitution of Embodiment 1 to 8 in any desired manner. Incorporatingthe EL display panel having the pixel structure of this Embodiment intothe electronic appliance of Embodiment 10 as its display part isadvantageous.

[0300] [Embodiment 16]

[0301] The embodiment of Embodiment 13 illustrated in FIG. 30A and FIG.30B is provided with the capacitor 3004 which acts to retain the voltageapplied to the gate in the current-control TFT 3003. In the embodiment,however, the capacitor 3004 may be omitted.

[0302] In the Embodiment 13, the current-control TFT 3003 is NTFT of theinvention, as shown in Embodiments 1 to 8. Therefore, in the embodiment,the LDD region is so formed that it overlaps with the gate electrode viathe gate-insulating film therebetween. In the overlapped region, formedis a parasitic capacitance generally referred to as a gate capacitance.This Embodiment is characterized in that the parasitic capacitance ispositively utilized in place of the capacitor 3004.

[0303] The parasitic capacitance in question varies, depending on thearea in which the gate electrode overlaps with the GOLD region, and istherefore determined according to the length of the GOLD region in theoverlapped area.

[0304] Also in Embodiment 15 illustrated in FIGS. 32A, 24B and 32C, thecapacitor 3205 can be omitted.

[0305] The constitution of this Embodiment can be combined with anyconstitution of Embodiment 1 to 8 in any desired manner. Incorporatingthe EL display device having the pixel structure of this Embodiment intothe electronic appliance of Embodiment 10 as its display part isadvantageous.

[0306] The present invention thus far described brings forth effects asstated below.

[0307] According to the present invention, even when the n-channel TFTof a pixel matrix circuit is driven by applying a gate voltage of 15 to20 V thereto, a stable operation can be attained. As a result, asemiconductor device including a CMOS circuit fabricated of crystallineTFTs, concretely the pixel matrix circuit of a liquid crystal displaydevice and the drive circuits thereof provided around the pixel matrixcircuit, can have their reliabilities enhanced, and a liquid crystaldisplay device of long life can be manufactured.

[0308] Moreover, according to the present invention, in the secondimpurity region of an n-channel TFT as is formed between the channelforming region and drain region thereof, a part (GOLD region) which agate electrode overlaps and a part (LDD region) which the gate electrodedoes not overlap can have their lengths set and actualized with ease.Concretely, the lengths of the part (GOLD region) of the second impurityregion to lie under the gate electrode and the part (LDD region) not tolie under the gate electrode can also be determined in accordance withthe drive voltage of the TFT. Thus, in a case where TFTs are to beoperated by different drive voltages within an identical substrate, theTFTs corresponding to the respective drive voltages can be fabricated byan identical process.

[0309] Furthermore, such features of the present invention are verysuitable for a liquid crystal display device of active matrix type inwhich a pixel matrix circuit and driver circuits require different drivevoltages and different TFT characteristics.

What is claimed is:
 1. A method of fabricating a semiconductor device,comprising the steps of: forming a semiconductor layer over a substratehaving an insulating surface; forming a gate insulating film in contactwith said semiconductor layer; forming a first conductive layer and asecond conductive layer on said gate insulating film; etching saidsecond conductive layer into a pattern, thereby to form a second layerof a gate electrode; doping a selected region of said semiconductorlayer with an impurity element of one conductivity type; forming a thirdconductive layer in contact with said first conductive layer and saidsecond layer of said gate electrode; etching said third conductive layerand said first conductive layer into a pattern, thereby forming a thirdlayer of said gate electrode and a first layer of said gate electrode;and doping a selected region of said semiconductor layer with animpurity element of said one conductivity type.
 2. A method offabricating a semiconductor device according to claim 2, wherein saidfirst layer of said gate electrode and said third layer of said gateelectrode comprise a material selected from the group consisting ofsilicon, titanium, tantalum, tungsten and molybdenum, and a compoundthereof.
 3. A method of fabricating a semiconductor device according toclaim 2, wherein said second layer of said gate electrode comprises amaterial selected from the group consisting of aluminum, copper and acompound thereof.
 4. A method of fabricating a semiconductor deviceaccording to claim 2, wherein said semiconductor device is a displaydevice which employs an electroluminescent material.
 5. A method offabricating a semiconductor device according claim 2, wherein saidsemiconductor device is selected from the group consisting of a personalcomputer, a video camera, a portable information terminal, a digitalcamera, a player used for a recording medium, a goggle type displaydevice, an electronic book, a portable telephone set and a projector. 6.A method of fabricating a semiconductor device, comprising the steps of:forming a semiconductor layer over a substrate having an insulatingsurface; forming a gate insulating film in contact with saidsemiconductor layer; successively forming a first conductive layer and asecond conductive layer on said gate insulating film; etching saidsecond conductive layer into a pattern, thereby to form a second layerof a gate electrode; doping a selected region of said semiconductorlayer with an impurity element of one conductivity type; forming a thirdconductive layer in contact with said first conductive layer and saidsecond layer of said gate electrode; etching said third conductive layerand said first conductive layer into a pattern, thereby to form a thirdlayer of said gate electrode and a first layer of said gate electrode;doping a selected region of said semiconductor layer with an impurityelement of said one conductivity type; and removing a part of said firstlayer of said gate electrode and said third layer of said gateelectrode.
 7. A method of fabricating a semiconductor device accordingto claim 6, wherein said first layer of said gate electrode and saidthird layer of said gate electrode comprise a material selected from thegroup consisting of silicon, titanium, tantalum, tungsten andmolybdenum, and a compound thereof.
 8. A method of fabricating asemiconductor device according to claim 6, wherein said second layer ofsaid gate electrode comprises a material selected from the groupconsisting of aluminum, copper and a compound thereof.
 9. A method offabricating a semiconductor device according to claim 6, wherein saidsemiconductor device is a display device which employs anelectroluminescent material.
 10. A method of fabricating a semiconductordevice according claim 6, wherein said semiconductor device is selectedfrom the group consisting of a personal computer, a video camera, aportable information terminal, a digital camera, a player used for arecording medium, a goggle type display device, an electronic book, aportable telephone set and a projector.
 11. A method of fabricating asemiconductor device, comprising: forming a first semiconductor layerand a second semiconductor layer over a substrate having an insulatingsurface; forming a gate insulating film on said first semiconductorlayer and said second semiconductor layer; successively forming a firstconductive layer and a second conductive layer on said gate insulatingfilm; etching said second conductive layer into a pattern, thereby toform a second layer of a gate electrode; doping a selected region ofsaid first semiconductor layer with an impurity element of oneconductivity type; forming a third conductive layer in contact with saidfirst conductive layer and said second layer of said gate electrode;etching said third conductive layer and said first conductive layer intoa pattern, thereby to form a third layer of said gate electrode and afirst layer of said gate electrode; doping selected regions of saidfirst semiconductor layer and said second semiconductor layer with animpurity element of said one conductivity type; and doping a selectedregion of said second semiconductor layer with an impurity of aconductivity type opposite to said one conductivity type.
 12. A methodof fabricating a semiconductor device according to claim 11, whereinsaid first layer of said gate electrode and said third layer of saidgate electrode comprise a material selected from the group consisting ofsilicon, titanium, tantalum, tungsten and molybdenum, and a compoundthereof.
 13. A method of fabricating a semiconductor device according toclaim 11, wherein said second layer of said gate electrode comprises amaterial selected from the group consisting of aluminum, copper and acompound thereof.
 14. A method of fabricating a semiconductor deviceaccording to claim 11, wherein said semiconductor device is a displaydevice which employs an electroluminescent material.
 15. A method offabricating a semiconductor device according claim 11, wherein saidsemiconductor device is selected from the group consisting of a personalcomputer, a video camera, a portable information terminal, a digitalcamera, a player used for a recording medium, a goggle type displaydevice, an electronic book, a portable telephone set and a projector.16. A method of fabricating a semiconductor device, comprising the stepsof: forming a first semiconductor layer and a second semiconductor layerover a substrate having an insulating surface; forming a gate insulatingfilm on said first semiconductor layer and said second semiconductorlayer; successively forming a first conductive layer and a secondconductive layer on said gate insulating film; etching said secondconductive layer into a pattern, thereby to form a second layer of agate electrode; doping a selected region of said first semiconductorlayer with an impurity element of one conductivity type; forming a thirdconductive layer in contact with said first conductive layer and saidsecond layer of said gate electrode; etching said third conductive layerand said first conductive layer into a predetermined pattern, thereby toform a third layer of said gate electrode and a first layer of said gateelectrode; doping selected regions of said first semiconductor layer andsaid second semiconductor layer with an impurity element of said oneconductivity type; removing parts of said first layer of said gateelectrode and said second layer of said gate electrode; and doping aselected region of said second semiconductor layer with an impurity of aconductivity type opposite to said one conductivity type.
 17. A methodof fabricating a semiconductor device according to claim 16, whereinsaid first layer of said gate electrode and said third layer of saidgate electrode comprise a material selected from the group consisting ofsilicon, titanium, tantalum, tungsten and molybdenum, and a compoundthereof.
 18. A method of fabricating a semiconductor device according toclaim 16, wherein said second layer of said gate electrode comprises amaterial selected from the group consisting of aluminum, copper and acompound thereof.
 19. A method of fabricating a semiconductor deviceaccording to claim 16, wherein said semiconductor device is a displaydevice which employs an electroluminescent material.
 20. A method offabricating a semiconductor device according claim 16, wherein saidsemiconductor device is selected from the group consisting of a personalcomputer, a video camera, a portable information terminal, a digitalcamera, a player used for a recording medium, a goggle type displaydevice, an electronic book, a portable telephone set and a projector.21. A method of fabricating a semiconductor device, comprising the stepsof: forming a first semiconductor layer and a second semiconductor layerover a substrate having an insulating surface; forming a gate insulatingfilm on said first semiconductor layer and said second semiconductorlayer; successively forming a first conductive layer and a secondconductive layer on said gate insulating film; etching said secondconductive layer into a pattern, thereby to form a second layer of agate electrode; doping a selected region of said first semiconductorlayer with an impurity element of one conductivity type; doping aselected region of said second semiconductor layer with an impurity of aconductivity type opposite to said one conductivity type; forming athird conductive layer in contact with said first conductive layer andsaid second layer of said gate electrode; etching said third conductivelayer and said first conductive layer into a pattern, thereby to form athird layer of said gate electrode and a first layer of said gateelectrode; and doping selected regions of said first semiconductor layerand said second semiconductor layer with an impurity element of said oneconductivity type.
 22. A method of fabricating a semiconductor deviceaccording to claim 21, wherein said first layer of said gate electrodeand said third layer of said gate electrode comprise a material selectedfrom the group consisting of silicon, titanium, tantalum, tungsten andmolybdenum, and a compound thereof.
 23. A method of fabricating asemiconductor device according to claim 21, wherein said second layer ofsaid gate electrode comprises a material selected from the groupconsisting of aluminum, copper and a compound thereof.
 24. A method offabricating a semiconductor device according to claim 21, wherein saidsemiconductor device is a display device which employs anelectroluminescent material.
 25. A method of fabricating a semiconductordevice according claim 21, wherein said semiconductor device is selectedfrom the group consisting of a personal computer, a video camera, aportable information terminal, a digital camera, a player used for arecording medium, a goggle type display device, an electronic book, aportable telephone set and a projector.